Waferpedia

Lam Research

590

EtchLam Research 590 family
Research Quality: 60% complete

Provisional entry — research in progress

This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

590 — Inventory photo
Fig. 01590Inventory photo[1]

Power

208V[1]

Vacuum

2.8 Torr[3]

Gas delivery

CF4+CHF3+He (90:30:120 sccm)[3]

What it is

The Lam Research 590 is a plasma etcher used in semiconductor manufacturing for dry etching of thin films on wafers. The Lam 590 is a legacy model from Lam Research, also referred to as the Autoetch 590. The machine is designed to handle six-inch wafers and operates at 208 volts.[1][2][4]

How it works

General reference — not yet source-verified

In a typical reactive-ion etch (RIE) process, the wafer is placed on a powered electrode. The plasma generates ions that accelerate toward the wafer, providing both chemical etching via reactive species and physical sputtering. The Lam 590, like other RIE tools, allows control over gas composition, pressure, power, and temperature to achieve anisotropic or isotropic etch profiles.

Where it fits in the process flow

General reference — not yet source-verified

The Lam 590 is used in the etch module of a semiconductor fabrication line. After photolithography defines a pattern in photoresist, the etcher transfers that pattern into the underlying film—such as oxide, nitride, or polysilicon—by removing material from unmasked areas. The etched wafer then moves to a resist strip or cleaning step before subsequent processing.

What do the numbers mean?

Power & electrical4

Voltage
208V[1]
Accurate?
Voltage
208 V[2]
Accurate?
RF frequency
13.56 MHz[3]
Accurate?
Power
208V[1]
Accurate?

Vacuum & pumping1

Pressure
2.8 Torr[3]
Accurate?

Wafer handling1

Wafer size
6 inch[1]
Accurate?

Gas & chemistry2

Plasma recipe entry
CF4+CHF3+He (90:30:120 sccm)[3]
Accurate?
Plasma recipe entry
SF6+He (175:50 sccm)[3]
Accurate?

Configuration & options6

Gap
0.38 cm[3]
Accurate?
Power (low)
450 W[3]
Accurate?
Power (high)
850 W[3]
Accurate?
OEM
Lam Research[1]
Accurate?
Model
590[1]
Accurate?
Category
Etcher[1]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Voltage208V[1]
  • Voltage208 V[2]
  • RF frequency13.56 MHz[3]
  • Pressure2.8 Torr[3]
  • Power208V[1]
  • Plasma recipe entryCF4+CHF3+He (90:30:120 sccm)[3]
  • Plasma recipe entrySF6+He (175:50 sccm)[3]

Where are the manuals?

Publicly hosted documents referencing this tool, linked at their original location. Hosted by the linked institutions — availability may change.

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Not publicly documented

Field notes

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Frequently asked questions

What RF power levels are used on the Lam 590?

The Lam 590 has been used at 450W and 850W.[3]

What is the chamber pressure and electrode gap for the Lam 590?

The Lam 590 operates at a pressure of 2.8 Torr with an electrode gap of 0.38 cm.[3]

Not publicly documented

The following facts about the 590 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 590 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the 590 are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the 590 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the 590 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the 590 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (4)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]Inventory photo
  3. [3]nanocenter.umd.edu — nanocenter.umd.edunanocenter.umd.edu
  4. [4]Lam Research Autoetch 590 - Rebuilt Plasma Etcher — spwindustrial.comspwindustrial.com
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Last updated Oct 3, 2026.

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