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Lam Research

2300 Exelan Dielectric

Provisional entry — research in progress

This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

The Lam Research 2300 Exelan is a dielectric etch system for 300mm wafers. The 2300 Exelan demonstrated capability for sub-65-nm front- and backend applications, including HARC and dual damascene processes.[1]

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What it is

The Lam Research 2300 Exelan is a dielectric etch system designed for 300 mm (12-inch) wafers.[2]

How it works

The 2300 Exelan uses Dual Frequency Confined (DFC) plasma technology. DFC provides two independent radio-frequency sources for process flexibility. The plasma is confined within the chamber to eliminate memory effects. The system includes in situ Waferless AutoCleans to maintain chamber cleanliness between wafers.[4][1]

Where it fits in the process flow

The 2300 Exelan is validated for critical front-end HARC (high-aspect-ratio contact) and SAC (self-aligned contact) etch, as well as back-end in situ low-k dual damascene etch.[4][1]

Applications

General reference — not yet source-verified

The system targets critical dielectric etch applications for advanced logic and memory devices. Dielectric etch processes define contact holes, via openings, and trench patterns in insulating layers.

What do the numbers mean?

Wafer handling1

Wafer Size
12 inch (300mm)[2]
Accurate?

Optics & imaging1

Node Capability
sub-65 nm (validated for front- and backend)[1]
Accurate?

Configuration & options1

Process
Dielectric Etch[3]
Accurate?
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Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What wafer size does the 2300 Exelan support?

The 2300 Exelan supports 300 mm (12-inch) wafers.[2]

What plasma technology does the 2300 Exelan use?

The system uses Dual Frequency Confined (DFC) plasma technology.[4][1]

At which earlier technology nodes was the 2300 Exelan proven?

The system demonstrated process performance at the 130-nm and 110-nm technology nodes.[4][1]

Does the 2300 Exelan include in situ cleaning?

Yes, it includes in situ Waferless AutoCleans to eliminate memory effects.[4][1]

Not publicly documented

The following facts about the 2300 Exelan Dielectric are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 2300 Exelan Dielectric are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the 2300 Exelan Dielectric are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the 2300 Exelan Dielectric are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the 2300 Exelan Dielectric are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the 2300 Exelan Dielectric is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (4)Every fact above is drawn from these public sources
  1. [1]newsroom.lamresearch.com — newsroom.lamresearch.comnewsroom.lamresearch.com
  2. [2]Equipment inventory listing
  3. [3]fabsurplus.comfabsurplus.com
  4. [4]Lam Research Newsroom - Press Releases — newsroom.lamresearch.comnewsroom.lamresearch.com
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Last updated Sep 22, 2026.

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