Applied Materials
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The VIISta HE XP is an ion implantation system produced by Applied Materials (formerly Varian Semiconductor Equipment). The VIISta HE XP is a high-current implanter.[1][2]
Ion implanters generate a beam of dopant ions from a source gas, accelerate the ions to a desired energy, and then scan the beam across the wafer surface to achieve a uniform implanted dose. High-current implanters typically use a ribbon beam or a spot beam that is mechanically scanned across the wafer to achieve high throughput.
Ion implantation is a critical step in the fabrication of integrated circuits, typically performed after photolithography and before annealing. High-current implanters are used for source/drain doping, polysilicon gate doping, and other high-dose applications that require heavy concentrations of dopants.
The primary application of high-current ion implanters is for high-dose doping of silicon wafers in CMOS logic and memory device fabrication. Typical implanted species include boron, phosphorus, and arsenic for p-type and n-type doping.
Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.
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The following facts about the VIISta HE XP are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the VIISta HE XP are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the VIISta HE XP are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the VIISta HE XP are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the VIISta HE XP are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the VIISta HE XP is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Sep 1, 2026.
The Axcelis GSD 200 E 2 is a high current implanter with source-stated wafer sizes of 6 inch and 8 inch.
The Varian Viision 200 (also spelled VIISion 200) is a batch-process, high-current ion implanter for 200 mm wafers, introduced in 1996.
The Varian 0216 7696, E 11368072 ESC is an electrostatic chuck (ESC) platen of the ADV-S type, categorized under ion implantation equipment.