Hitachi
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An etcher removes material from a wafer surface using plasma or chemical processes to define device patterns.
Etching is performed after photolithography to transfer the photoresist pattern into the underlying layer.
The etched wafer then moves to downstream steps such as resist stripping, cleaning, and deposition.
The etcher is used for dielectric or metal etching in the fabrication of integrated circuits.
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The following facts about the DM 421 P are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
Fewer than 3 independently cited specifications for the DM 421 P are on record; the remainder await public documentation.
Answerable by: an OEM datasheet, a cleanroom equipment inventory, or an engineer who operated or installed it
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the DM 421 P are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the DM 421 P are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the DM 421 P are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the DM 421 P are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
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Last updated Oct 2, 2026.
The Applied Materials 0010-47763 is an electrostatic chuck (ESC) assembly used in semiconductor etching processes.
The Applied Materials 0010-16392 is an electrostatic chuck assembly designed for 300 mm wafer processing, featuring a dual electrode configuration.
Oxford Instruments 100 ICP Fluorine is an inductively coupled plasma etcher for fluorine-based etching, supporting cryo DRIE and multiple etch gases including SF6 and C4F8.