Axcelis
VHE
Wafer size
8"
Power
90 KeV[1]
Performance
Source Extraction Alignment Jig[1]
Gas delivery
Boron, Phosfine[1]
Optics
Beamline Column[1]
What it is
General reference — not yet source-verifiedIon implantation is a process in semiconductor manufacturing where dopant atoms are accelerated and embedded into a silicon wafer to modify its electrical properties. Batch ion implanters process multiple wafers simultaneously to achieve high throughput.
How it works
The Axcelis VHE uses a Bernas ion source with triple axes extraction. Ions pass through an analyzing magnet (AMU) and a beamline column. For high-energy operation, the system incorporates a 14-stage linear accelerator (LINAC). The end station includes wafer tilt capability, a mechanical clamp for wafer holding, and load and unload locks for vacuum isolation.[1][2]
Where it fits in the process flow
General reference — not yet source-verifiedHigh-energy ion implanters are typically used after photolithography patterning to place dopants deep into the silicon substrate, followed by annealing to activate the dopants and repair crystal damage.
Applications
General reference — not yet source-verifiedHigh-energy implantation is used to form deep wells, retrograde wells, and buried layers that are critical for device isolation and performance in advanced semiconductor devices.
What do the numbers mean?
Power & electrical1
Wafer handling8
Gas & chemistry2
- SDS Gas Box[1]
Optics & imaging1
- Beamline Column[1]
Performance1
- Source Extraction Alignment Jig[1]
Configuration & options11
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What variables control the result of implantation?General reference — not yet source-verified
The main variables are ion species, beam energy, dose, beam current, and how the beam is distributed across the substrate.
Why is implantation used instead of simple surface deposition?General reference — not yet source-verified
Implantation places atoms beneath the surface with fine control over depth and concentration, which is important for device electrical behavior.
Not publicly documented
The following facts about the VHE are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the VHE are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the VHE are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the VHE are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the VHE are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the VHE is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (2)Every fact above is drawn from these public sources
- [1]Inventory photo
- [2]GSD Ovation | 高電流および高エネルギーバッチ式イオン注入機 — axcelis.com (Feb 7, 2026)web.archive.org
Last updated Oct 1, 2026.
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