Applied Materials
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
The Applied Materials Centura DPS 2 Poly Etcher is a poly semiconductor etching system. The model Centura DPS 2 is specifically designated as a poly etcher.[1]
The tool operates at low pressure to maintain directional ion bombardment and uses process gases such as chlorine or bromine-containing compounds to etch polysilicon. Endpoint detection systems monitor the etch process to stop at the underlying layer.
The poly etch step is a critical part of front-end-of-line (FEOL) processing after polysilicon deposition and photolithographic patterning of the gate electrode. The Centura DPS 2 Poly Etcher is used to define the polysilicon gates of CMOS transistors.
Upstream processes include polysilicon chemical vapor deposition (CVD) and resist coating/exposure. Downstream steps include resist stripping, post-etch cleaning, and oxidation or spacer deposition. The etch must produce vertical sidewalls with tight critical dimension control.
The primary application of the Centura DPS 2 Poly Etcher is the anisotropic etching of polycrystalline silicon (polysilicon) for gate electrode formation in CMOS logic and memory devices.
The tool can also be used to etch other silicon-based films such as amorphous silicon or poly-SiGe for specialized device structures, as well as for etching polysilicon in capacitor plates or interconnects.
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
No research found yet — worked with this tool? Share what you know.
The following facts about the Centura DPS 2 Poly are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
Fewer than 3 independently cited specifications for the Centura DPS 2 Poly are on record; the remainder await public documentation.
Answerable by: an OEM datasheet, a cleanroom equipment inventory, or an engineer who operated or installed it
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Centura DPS 2 Poly are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Centura DPS 2 Poly are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Centura DPS 2 Poly are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Centura DPS 2 Poly are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
No research found yet — worked with this tool? Share what you know.
Last updated Oct 1, 2026.
The Applied Materials 0010-47763 is an electrostatic chuck (ESC) assembly used in semiconductor etching processes.
The Applied Materials 0010-16392 is an electrostatic chuck assembly designed for 300 mm wafer processing, featuring a dual electrode configuration.
Oxford Instruments 100 ICP Fluorine is an inductively coupled plasma etcher for fluorine-based etching, supporting cryo DRIE and multiple etch gases including SF6 and C4F8.