Tokyo Electron
Trias High K
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
What it is
General reference — not yet source-verifiedThe Tokyo Electron Trias High K is a chemical vapor deposition (CVD) and atomic layer deposition (ALD) system used for depositing high-k dielectric films onto semiconductor wafers.
How it works
The Trias High K system operates as a cluster tool with multiple chambers for different deposition processes.[3][4]
The cluster includes a transfer module, two load ports, and two processing chambers designated PM2 and PM4.[3][4]
PM2 is a high-k CVD reactor; PM4 is a thermal-based deposition chamber, both capable of operating at temperatures from 200 °C up to 500 °C.[3][4]
The Trias High K includes an ozonizer and a water box for process chemistry, and is operated via two touch-screen interfaces.[3][4]
Where it fits in the process flow
General reference — not yet source-verifiedThe Trias High K is used in the front-end-of-line (FEOL) portion of semiconductor manufacturing, specifically in the gate stack formation where high-k dielectric materials replace traditional silicon dioxide gate oxides.
Deposition of high-k films such as hafnium oxide and nickel oxide occurs after cleaning and before metal gate electrode deposition, forming part of the high-k/metal gate (HKMG) integration scheme.
What do the numbers mean?
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- Process typeCVD (Chemical Vapor Deposition)[1]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
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Frequently asked questions
Not publicly documented
The following facts about the Trias High K are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Trias High K are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Trias High K are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Trias High K are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Trias High K are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Trias High K is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Sources & citations
Sources (4)Every fact above is drawn from these public sources
- [1]Inventory photo
- [2]waferpedia.comwaferpedia.com
- [3]fabsurplus.com — fabsurplus.comfabsurplus.com
- [4]https://www.solutions-on-silicon.com/web/content/172420?unique=9959f775c232b56bc8b6bf7ca054ca6451cbe8ed&download=true — solutions-on-silicon.comsolutions-on-silicon.com
Last updated Oct 4, 2026.
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