Waferpedia

Tegal

6540

Etch100mmdown to 90nmTegal 6540 family
Research Quality: 60% complete

The Tegal 6540 is a high-density CCP plasma etch tool. The Tegal 6540 features dual-frequency RF power application and magnetic plasma confinement. The Tegal 6540 is optimized for device design rules down to 90nm.[1]

6540 — web.archive.org
Fig. 016540web.archive.org[2]

Wafer size

100mm

Node / era

down to 90nm

Power

dual-frequency RF power application[1]

What it is

The Tegal 6540 is a high-density plasma etch tool.[2][3][1]

The Tegal 6540 belongs to Tegal's 6500 series of etch systems.[2][3]

How it works

The Tegal 6540 uses dual-frequency RF power and magnetic plasma confinement.[2][3][1]

The Tegal 6540 features the HRe reactor.[2][3][1]

Where it fits in the process flow

The Tegal 6540 is used for selective removal of hard-to-etch films and structures in device manufacturing.[2][3][1]

Applications

The Tegal 6540 was used for MEMS fabrication.[2]

The Tegal 6540 was used for etching platinum and iridium electrode and capacitor structures, ferroelectric materials, high-k dielectric materials, and gold interconnects.[2][3][1]

The Tegal 6540 was also used for non-volatile ferroelectric random access memory device manufacturing and for high-k decoupling capacitor production.[2][3][1]

The Tegal 6540 was optimized for device design rules down to 0.13 micron and later to 90nm.[2][1]

  • MEMS fabrication
  • removing hard-to-etch materials
  • high-K decoupling capacitors
  • cell phones
  • other wireless devices
  • noble metal electrodes and capacitor structures
  • ferroelectric materials
  • high-K dielectric materials
  • compound semiconductor materials
  • interconnect materials
  • DRAM devices
  • embedded memory devices
  • FeRAM device manufacturing

What do the numbers mean?

Power & electrical2

Plasma technology
dual-frequency RF power technology / dual-frequency RF power application[2]
Accurate?
RF power
dual-frequency RF power application[1]
Accurate?

Wafer handling1

Wafer size
100mm – 200mm[1]
Accurate?

Configuration & options9

Type
high-density plasma etch system[2]
Accurate?
Type
high-density plasma etch tool[1]
Accurate?
Reactor
HRe reactor / HRe™ reactor[2]
Accurate?
Reactor
HRe™ reactor[3]
Accurate?
Plasma confinement
magnetic plasma confinement[2]
Accurate?
Optimized design rule
down to 0.13 micron[2]
Accurate?
Optimized design rule
down to 90nm[1]
Accurate?
Type
high-density CCP plasma etch tool[1]
Accurate?
Design rule
optimized for device design rules down to 90nm[1]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
6540 HRe——Same 6540 line name used for a version described as a high-density CCP plasma etch tool with dual-frequency RF power application and magnetic plasma confinement; wafer size stated as 100mm–200mm and optimized down to 90nm.web.archive.org[1]
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Plasma technologydual-frequency RF power technology / dual-frequency RF power application[2]
  • RF powerdual-frequency RF power application[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

How does the machine control etch rate and selectivity?General reference — not yet source-verified

Etch rate and selectivity are controlled by adjusting process parameters such as gas composition, pressure, power, and temperature. The balance between chemical and physical etching components determines the material removal rate and the ability to stop on underlying layers.

What is the typical maintenance requirement for such a system?General reference — not yet source-verified

Routine maintenance includes cleaning the chamber to remove etch byproducts, replacing worn components like electrodes and focus rings, and calibrating gas flow controllers and pressure sensors. The chamber may also require periodic conditioning to ensure process stability.

Can this machine handle high-volume manufacturing?General reference — not yet source-verified

Machines in this class are generally designed for production environments, offering automated wafer handling and process control. Throughput depends on the specific process recipe and chamber design, but they can be integrated into automated manufacturing lines.

Not publicly documented

The following facts about the 6540 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 6540 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the 6540 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the 6540 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • No publicly documented compatible parts, consumables, or accessories for the 6540 are on record.

    Answerable by: an OEM parts catalog or a service engineer

  • No publicly hosted manuals, SOPs, or datasheets for the 6540 are on record.

    Answerable by: university cleanroom staff or an OEM application specialist

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Sources & citations

Sources (3)Every fact above is drawn from these public sources
  1. [1]web.archive.org — web.archive.orgweb.archive.org
  2. [2]web.archive.org — web.archive.orgweb.archive.org
  3. [3]web.archive.org — web.archive.orgweb.archive.org
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Last updated Oct 5, 2026.

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