Waferpedia

Strasbaugh

6 EC

CMPStrasbaugh 6 EC family
Research Quality: 70% complete

The Strasbaugh 6 EC (also marketed as the nSpire CMP system) is a chemical mechanical polishing tool used for planarization and sample preparation. The Strasbaugh 6 EC supports 3-inch and 4-inch (100 mm) wafers with fully programmable control of polishing parameters. The Strasbaugh 6 EC features a ViPRR carrier and Hydro-Lift load station to minimize contamination, and an advanced pad conditioning system with 20 programmable zones.[1]

6 EC — Inventory photo
Fig. 016 ECInventory photo[2]

How it works

The Strasbaugh 6 EC supports programmable sweep, downpressure, table speed, time, and slurry flow.[3]

Where it fits in the process flow

The Strasbaugh 6 EC is used for silicon and silicon dioxide polishing and planarizing at the University of Utah nanofabrication facility.[4]

Applications

The Strasbaugh 6 EC at Carnegie Mellon has substrate chucks for 3-inch and 4-inch wafers.[3]

The Strasbaugh 6 EC at the University of Utah is used for silicon and silicon dioxide polishing and planarizing.[4]

What do the numbers mean?

Power & electrical9

50/60 Hz[2]
Accurate?
Phase
3 Phase[2]
Accurate?
Voltage
208 V[2]
Accurate?
13.6 Motor Amps[2]
Accurate?
Input voltage
208 V[2]
Accurate?
Frequency
50/60 Hz[2]
Accurate?
Motor amps
13.6 A[2]
Accurate?
Power
50/60 Hz, 3 phase, 208 V[2]
Accurate?
Motor current
13.6 motor amps[2]
Accurate?

Vacuum & pumping1

Programmable controls
fully programmable sweep, downpressure, table speed, time, slurry flow[3]
Accurate?

Wafer handling5

Wafer size (inch)
3, 4[3]
Accurate?
Wafer size (mm)
100[4]
Accurate?
Carrier type
ViPRR[1]
Accurate?
Wafer size
100 mm[4]
Accurate?
Substrate chucks
3-inch and 4-inch wafers[3]
Accurate?

Control & software2

Control interface
Color touch-screen GUI[1]
Accurate?
Table and spindle motor control
Closed-loop RPM[1]
Accurate?

Configuration & options10

Full Load
30 A[2]
Accurate?
Phase
3[2]
Accurate?
Full load current
30 A[2]
Accurate?
Conditioning arm sweep zones
10[5]
Accurate?
Pad conditioning zones
20[1]
Accurate?
Load station
Hydro-Lift[1]
Accurate?
Pad conditioning type
In-situ and ex-situ[1]
Accurate?
Typical applications
Si and SiO2 polishing and planarizing[4]
Accurate?
Asset / model
Strasbaugh 6 EC[2]
Accurate?
Functions
Si and SiO2 polishing and planarizing[4]
Accurate?
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What replaced it?

Alternatives

Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Configuration50/60 Hz[2]
  • Phase3 Phase[2]
  • Voltage208 V[2]
  • Configuration13.6 Motor Amps[2]
  • Input voltage208 V[2]
  • Frequency50/60 Hz[2]
  • Motor amps13.6 A[2]
  • Power50/60 Hz, 3 phase, 208 V[2]
  • Motor current13.6 motor amps[2]
  • Programmable controlsfully programmable sweep, downpressure, table speed, time, slurry flow[3]

Where are the manuals?

Publicly hosted documents referencing this tool, linked at their original location. Hosted by the linked institutions — availability may change.

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What does a CMP machine do?General reference — not yet source-verified

It removes material while flattening the surface, using a combination of abrasive slurry and controlled mechanical motion.

Why is planarization important?General reference — not yet source-verified

Planarization helps keep later process steps uniform by reducing surface height variation and making the work surface more level.

What is removed during CMP?General reference — not yet source-verified

Material is removed from the surface in a controlled way, often from higher areas first, so the overall topography becomes more even.

Where does CMP fit in manufacturing?General reference — not yet source-verified

It is used between fabrication steps when a surface must be made flat before additional layers or patterns are added.

What kinds of surfaces are processed by this class of tool?General reference — not yet source-verified

Machines of this class are used on semiconductor wafers and other precision substrates that need controlled flattening and finishing.

Not publicly documented

The following facts about the 6 EC are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 6 EC are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the 6 EC are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the 6 EC are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the 6 EC are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the 6 EC is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (6)Every fact above is drawn from these public sources
  1. [1]web.archive.org — strasbaugh.com (Jan 6, 2009)web.archive.org
  2. [2]Inventory photo
  3. [3]nanofab.ece.cmu.edu — nanofab.ece.cmu.edunanofab.ece.cmu.edu
  4. [4]nanofab.utah.edu — nanofab.utah.edunanofab.utah.edu
  5. [5]cnfusers.cornell.edu — cnfusers.cornell.educnfusers.cornell.edu
  6. [6]patents.google.compatents.google.com
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Last updated Oct 10, 2026.

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