Canon
The Canon FPA 3000 iW is a lithography stepper. The Canon FPA 3000 iW uses i-line exposure at 365 nm. The Canon FPA 3000 iW supports wafers from 4" through 8" SEMI Standard, JEIDA, Notch / Flat.[1]

Power
200V[6]
Vacuum
2.0KW Super High Pressure Hg Lamp[1]
Performance
< 1.5%[1]
Optics
6" square t=0.25"[1]
A lithography aligner or stepper exposes photosensitive material through a patterned mask while aligning the workpiece to existing features.
A lithography aligner transfers the mask pattern onto the coated substrate so later process steps can define smaller structures with controlled registration.
A lithography aligner sits in the patterning flow of semiconductor fabrication after a substrate has been prepared with photosensitive coating and before the exposed image is developed and transferred into underlying layers.
The Canon FPA 3000 iW supports repeated pattern-definition steps during device fabrication.
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| Canon FPA 3000 iW Fine Pattern | — | — | — | waferpedia.com[7] |
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Most lithography systems in this class use a mercury arc lamp or excimer laser as the light source. The wavelength is typically in the i-line (mid-ultraviolet) or deep ultraviolet range, depending on the specific model and generation.
Alignment is performed using an off-axis or through-the-lens optical system that detects alignment marks on the wafer and the reticle. The stage moves to align each exposure field with high precision, using feedback from sensors to correct for positional errors.
The resolution is governed by the exposure wavelength and the numerical aperture of the projection lens, according to the Rayleigh criterion. Additionally, photoresist chemistry and process parameters such as focus and dose uniformity affect the achievable critical dimension.
Routine maintenance includes cleaning of optical elements, replacement of lamps or laser modules, and calibration of alignment and stage systems. Frequency depends on usage intensity, but typical preventive maintenance intervals are measured in months or after a certain number of wafer exposures.
Not necessarily. Different layers have different resolution and overlay requirements. For advanced processes, leading-edge layers may require a high-resolution scanner, while less critical layers can be exposed on a lower-resolution stepper. The choice depends on the specific device design and manufacturing strategy.
The following facts about the FPA 3000 iW are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the FPA 3000 iW are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the FPA 3000 iW are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the FPA 3000 iW are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the FPA 3000 iW is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the FPA 3000 iW are on record.
Answerable by: an OEM parts catalog or a service engineer
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Last updated Oct 10, 2026.
Brooks 017-0146-01 is a prealigner manufactured by Brooks.
The EVG 101 is an advanced resist processing system for spin or spray coating and developing of wafers up to 300 mm.