SUSS MicroTec
PA 300 Control
The SUSS MicroTec PA 300 Control is a CMP tool. The SUSS MicroTec PA 300 Control has a 500 VA, 115V, 60Hz power specification. The SUSS MicroTec PA 300 Control includes a 12-inch nickel plated aluminum chuck.[1][2]
What it is
The SUSS MicroTec PA 300 Control is a CMP equipment model.[2]
How it works
General reference — not yet source-verifiedCMP equipment removes material by pressing a workpiece against a rotating polishing surface while slurry and pressure control shape the surface finish.
A CMP tool typically combines mechanical motion, temperature control, optical inspection, and positioning hardware to support controlled planarization and monitoring during processing.
Where it fits in the process flow
General reference — not yet source-verifiedCMP sits in the back-end of process flow where surface topography must be reduced before later patterning or metrology steps.
CMP is used after material deposition or other topography-forming steps when a flatter wafer surface is needed for subsequent fabrication.
Applications
General reference — not yet source-verifiedCMP tools are used for surface planarization in semiconductor manufacturing.
CMP is applied to wafer surfaces that require controlled polishing and removal of local height variation.
What do the numbers mean?
Power & electrical2
- 500 VA, 115V, 60Hz[1]
Wafer handling3
- 12" Nickel Plated Aluminum Chuck[1]
Optics & imaging2
- 10X, 2X Mitutoyo Plan Apo Objective, 2ea[1]
Control & software3
- ATT M300 Temp Control Unit[1]
Configuration & options6
What replaced it?
Alternatives
Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.
- Applied Materials Mirra 3400— Same function class: CMP, nullCompare in depthsource[2]
- Applied Materials Mirra Mesa— Same function class: CMP, nullCompare in depthsource[2]
- Applied Materials Reflexion 3600— Same function class: CMP, nullCompare in depthsource[2]
- SCREEN AS 2000— Same function class: CMP, nullCompare in depthsource[2]
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What are the key consumables used in a CMP system?General reference — not yet source-verified
The main consumables in a CMP system are polishing pads and slurries. Polishing pads are typically made of polyurethane or composite materials and require periodic conditioning. Slurries contain abrasive particles (e.g., silica or alumina) and chemical additives tailored to the material being polished.
What factors influence the removal rate in CMP?General reference — not yet source-verified
Removal rate in CMP is influenced by several factors including applied pressure, platen and carrier rotational speeds, slurry composition and flow rate, pad condition, and wafer temperature. The chemical-mechanical synergy means that changes in any of these parameters can significantly alter the removal rate and uniformity.
What are common challenges in operating a CMP system?General reference — not yet source-verified
Common challenges include achieving uniform material removal across the wafer (within-wafer non-uniformity), preventing edge effects, avoiding scratches or defects, controlling slurry consumption, and managing pad wear and conditioning. Process control and endpoint detection are critical to maintaining consistent results.
Not publicly documented
The following facts about the PA 300 Control are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the PA 300 Control are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the PA 300 Control are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the PA 300 Control are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the PA 300 Control are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the PA 300 Control is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (3)Every fact above is drawn from these public sources
- [1]Inventory photo
- [2]waferpedia.com — waferpedia.comwaferpedia.com
- [3]Equipment inventory listing
Last updated Oct 3, 2026.
Compare with similar tools
View all →The SCREEN / DNS AS 2000 is a CMP (Chemical Mechanical Polisher) for 8-inch wafers.
The Applied Materials Mirra 3400 is a chemical mechanical planarization (CMP) system for 150 mm and 200 mm wafer processing.
Applied Materials Mirra Mesa is a CMP (Chemical Mechanical Polisher) with a 4-head, 3-platen polisher system module.
The Applied Materials Reflexion 3600 is a CMP (Chemical Mechanical Polisher).
