STS
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STS 320 PC is a fully automatic computer controlled reactive ion etching system. STS 320 PC includes end point detection. STS 320 PC handles substrates from 2 to 8 inch and small fragments.[1]
The STS 320 PC is a fully automatic computer controlled reactive ion etching system that includes an end point detection system.[1]
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The cathode diameter is 30 cm.[1]
The RF forward power range is 10 to 600 watts.[1]
The chamber maximum pressure is 500 mTorr.[1]
The system handles substrate sizes from 2 to 8 inches and small fragments.[1]
Process gases available are SF6, CHF3, C3F8, He, CF4, O2, and N2.[1]
Yes, the system includes an end point detection system.[1]
The following facts about the 320 PC are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 320 PC are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the 320 PC are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 320 PC are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 320 PC are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 320 PC is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 9, 2026.