Waferpedia

Oxford Instruments

PlasmaPro NGP 1000

PlasmaPro NGP 1000 — Inventory photo
Fig. 01PlasmaPro NGP 1000Inventory photo[1]

Wafer size

up to 450mm wafer size

Power

600W 13.56Mhz HF RF Generator[1]

Vacuum

Load Lock vacuum pump[1]

Gas delivery

Gas-Shock assisted Chamber Lift Mechanism[1]

What it is

The Oxford Instruments PlasmaPro NGP 1000 is a plasma-enhanced chemical vapor deposition system. The machine is a deposition tool configured for wafer processing up to 450 mm.[1][2]

The PlasmaPro NGP 1000 is a vacuum process tool with a load-locked chamber and an external gas box. The equipment includes system control hardware and process support hardware for plasma deposition operation.[1][2]

How it works

The PlasmaPro NGP 1000 uses a 600 W high-frequency generator at 13.56 MHz and a 600 W low-frequency generator at 100 kHz. The machine also uses an Adixen ADS602P dry pump for the process chamber and a separate load-lock pump.[1][2]

The PlasmaPro NGP 1000 includes a gas-shock assisted chamber lift mechanism and an X20 external gas box with up to 12 gas lines. The machine can be configured with He, CF4, N2, N2O, NH3, and SiH4-N2.[1][2]

Where it fits in the process flow

The PlasmaPro NGP 1000 sits in the deposition segment of wafer fabrication. The load-locked chamber supports wafer transfer into a controlled vacuum process environment before film deposition.[2]

The PlasmaPro NGP 1000 can be used with a chamber heating kit and is specified for operation up to 400 C. The machine also includes a 490 mm diameter aluminum lower electrode.[1][2]

Applications

The PlasmaPro NGP 1000 is used for plasma-enhanced chemical vapor deposition on wafers. The gas set named for the machine includes species commonly used in plasma deposition chemistries and related process tuning.[1][2]

What do the numbers mean?

Power & electrical8

Dual Frequency RF with Pulsing for Film Stress Control[1]
Accurate?
Power
600W 13.56Mhz HF RF Generator[1]
Accurate?
Power
600W 100khz LF RF Generator[1]
Accurate?
RF Power (HF)
600W at 13.56MHz[1]
Accurate?
RF Power (LF)
600W at 100kHz[1]
Accurate?
RF Configuration
Dual Frequency RF with Pulsing for Film Stress Control[1]
Accurate?
HF RF power
600W at 13.56MHz[2]
Accurate?
LF RF power
600W at 100kHz[2]
Accurate?

Vacuum & pumping4

Adixen ADS602P Dry Pump for Process Chamber[1]
Accurate?
Load Lock vacuum pump[1]
Accurate?
Process Pump
Adixen ADS602P Dry Pump[2]
Accurate?
Load Lock Pump
Load Lock vacuum pump[2]
Accurate?

Wafer handling6

Wafer size
up to 450mm wafer size[1]
Accurate?
Load Locked Chamber[1]
Accurate?
Capable of running up 450mm wafers[1]
Accurate?
Wafer Size
up to 450mm[1]
Accurate?
Chamber
Load Locked Chamber[1]
Accurate?
Wafer handling
Load Locked Chamber[2]
Accurate?

Gas & chemistry6

Gas-Shock assisted Chamber Lift Mechanism[1]
Accurate?
X20 External Gas Box with up to 12 Gas Lines. Currently Configured for: He, CF4, N2, N20, NH3, SiH4-N2[1]
Accurate?
Process Type
Plasma-Enhanced Chemical Vapor Deposition (PECVD)[1]
Accurate?
Gas Box
X20 External Gas Box with up to 12 Gas Lines[1]
Accurate?
Gas Configuration
He, CF4, N2, N20, NH3, SiH4-N2[1]
Accurate?
Chamber Lift
Gas-Shock assisted Chamber Lift Mechanism[1]
Accurate?

Control & software5

System PC, Keyboard, Mouse[1]
Accurate?
Windows 7 w/ PC4500 Control Software[1]
Accurate?
X20 PLC[1]
Accurate?
Control Software
Windows 7 with PC4500 Control Software[1]
Accurate?
PLC
X20 PLC[1]
Accurate?

Configuration & options11

490mm Diameter Aluminum Lower Electrode[1]
Accurate?
Up to 400*C[1]
Accurate?
Chamber Heating Kit (Heats Chamber Sidewalls to Minimize Process Deposition)[1]
Accurate?
Operations Manual and Documentation[1]
Accurate?
Fully Refurbished to excellent condition[1]
Accurate?
Chamber disassembled for refurbishment.[1]
Accurate?
Chamber received full wet clean[1]
Accurate?
Lower Electrode Diameter
490mm[1]
Accurate?
Lower Electrode Material
Aluminum[2]
Accurate?
Maximum Temperature
400°C[2]
Accurate?
Chamber Heating
Chamber Heating Kit (Heats Chamber Sidewalls to Minimize Process Deposition)[1]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
PlasmaPro NGP1000 ICP 380—2013Etch version with ICP source (5kW, 2MHz RF), 3000W 13.56MHz RF for RIE, different turbo pump and dry pumps, different gas configuration (BCL3, N2, CL2, HBr, SF6, CF4, Ar, O2), mechanical wafer clamping, optical endpoint detector.classoneequipment.com[3]
Oxford PlasmaPro NGP1000 ICP 380—2013Etch version with ICP source, 5kW 2MHz RF, 3000W 13.56MHz RF for RIE, different turbo pump and dry pumps, different gas configuration, mechanical wafer clamping, and optical endpoint detector.classoneequipment.com[3]
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • ConfigurationDual Frequency RF with Pulsing for Film Stress Control[1]
  • Power600W 13.56Mhz HF RF Generator[1]
  • Power600W 100khz LF RF Generator[1]
  • ConfigurationGas-Shock assisted Chamber Lift Mechanism[1]
  • ConfigurationAdixen ADS602P Dry Pump for Process Chamber[1]
  • ConfigurationLoad Lock vacuum pump[1]
  • ConfigurationX20 External Gas Box with up to 12 Gas Lines. Currently Configured for: He, CF4, N2, N20, NH3, SiH4-N2[1]
  • Process TypePlasma-Enhanced Chemical Vapor Deposition (PECVD)[1]
  • RF Power (HF)600W at 13.56MHz[1]
  • RF Power (LF)600W at 100kHz[1]
  • RF ConfigurationDual Frequency RF with Pulsing for Film Stress Control[1]
  • Process PumpAdixen ADS602P Dry Pump[2]
  • Load Lock PumpLoad Lock vacuum pump[2]
  • Gas BoxX20 External Gas Box with up to 12 Gas Lines[1]
  • Gas ConfigurationHe, CF4, N2, N20, NH3, SiH4-N2[1]
  • Chamber LiftGas-Shock assisted Chamber Lift Mechanism[1]
  • HF RF power600W at 13.56MHz[2]
  • LF RF power600W at 100kHz[2]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What process class is the PlasmaPro NGP 1000?

The PlasmaPro NGP 1000 is a PECVD deposition system.[1][2]

Not publicly documented

The following facts about the PlasmaPro NGP 1000 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the PlasmaPro NGP 1000 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the PlasmaPro NGP 1000 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the PlasmaPro NGP 1000 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the PlasmaPro NGP 1000 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the PlasmaPro NGP 1000 are on record.

    Answerable by: an OEM parts catalog or a service engineer

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Sources & citations

Sources (3)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]waferpedia.com — waferpedia.comwaferpedia.com
  3. [3]classoneequipment.com — classoneequipment.comclassoneequipment.com
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Last updated Oct 7, 2026.

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