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Comparison ledger

160 XPversusKestrel II 750

Varian 160 XP, Varian Kestrel II 750, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
160 XPVarian
OEMVarianVarian
CategoryIon ImplantationIon Implantation
Wafer size—10 Site Disk, 10 Wafer per Batch
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyVarian 160 XPVarian Kestrel II 750
Cited variants—
Specifications
Configuration (160 XP Ion variant)150mm High Current IMP[1]—
Configuration—High current[2]
Energy Range—10 - 3750 kV[3]
Wafer size—10 Site Disk, 10 Wafer per Batch[4]
Voltage—30 kV Terminal PS[3]
Wafer Size—8 inch[2]
Batch Size—10 Wafers per Batch[3]
Disk Sites—10 Site Disk[3]
Gas Modules—4 Gas Modules[3]
Gases—Argon (factory inlet), PH3 SDS, AsH3 SDS, BF3 SDS[3]
Automatic Handling—Yes[3]
Software Version—6.41[4]
High Current—Yes[4]
Power Supply Interface (PSI) Controller—Included[4]
Source Vacuum Controller—Included[4]
Manipulator Controller—Included[4]
30 kV Terminal PS—Included[4]
60 kV Tube Lens PS—Included[4]
Category—Ion Implantation[4]
Handling system—Automatic Handling system[3]
Gas box—Fully Automated Gas Box, 4 Gas Modules[3]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]inventory listing
  3. [3]inventory listing
  4. [4]waferpedia.comwaferpedia.com