Comparison ledger
Tegal 6540, Tegal 915, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6540Tegal | 915Tegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | down to 90nm | — |
| Introduced | — | — |
| Production run | — | 1984– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 6540 | Tegal 915 |
| Cited variants |
| — |
| Specifications | ||
| Type | high-density plasma etch system[2] | Plasma barrel etcher[4] |
| Reactor | HRe reactor / HRe™ reactor[2] | — |
| Plasma technology | dual-frequency RF power technology / dual-frequency RF power application[2] | — |
| Plasma confinement | magnetic plasma confinement[2] | — |
| Wafer size | 100mm – 200mm[1] | 100mm[5] |
| Optimized design rule | down to 0.13 micron[2] | — |
| RF power | dual-frequency RF power application[1] | — |
| Design rule | optimized for device design rules down to 90nm[1] | — |
| Batch capacity | — | Six cassettes of 100 mm wafers (150 pcs.) and four cassettes of 125 mm and 150 mm wafers (100 pcs.)[4] |
| Feed gases | — | Two independent feed gases[4] |
| Reaction chamber temperature control | — | Up to 100 degrees C[4] |
| Production start | — | 1984[5] |
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