Comparison ledger
Tegal 6540, Tegal 900, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6540Tegal | 900Tegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | down to 90nm | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 6540 | Tegal 900 |
| Cited variants |
| |
| Specifications | ||
| Type | high-density plasma etch system[3] | plasma etch system[5] |
| Reactor | HRe reactor / HRe™ reactor[3] | — |
| Plasma technology | dual-frequency RF power technology / dual-frequency RF power application[3] | — |
| Plasma confinement | magnetic plasma confinement[3] | — |
| Wafer size | 100mm – 200mm[1] | 3", 100mm–150mm[2] |
| Optimized design rule | down to 0.13 micron[3] | — |
| RF power | dual-frequency RF power application[1] | — |
| Design rule | optimized for device design rules down to 90nm[1] | — |
| Product line | — | 900 Series plasma etch system[5] |
| Substrate handling | — | Handles both round and square substrates[5] |
| Use case | — | Defreckling and backside nitride etching[5] |
| Process type | — | Single wafer plasma RIE[2] |
| Applications | — | defreckling and backside nitride etching[5] |
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