Waferpedia

Comparison ledger

120 Continuousversus6 EC

Lapmaster 120 Continuous, Strasbaugh 6 EC, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
6 ECStrasbaugh
OEMLapmasterStrasbaugh
CategoryCMPCMP
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLapmaster 120 ContinuousStrasbaugh 6 EC
Specifications
Configuration—50/60 Hz[1]
Phase—3 Phase[1]
Voltage—208 V[1]
Full Load—30 A[1]
Wafer size (inch)—3, 4[2]
Wafer size (mm)—100[3]
Input voltage—208 V[1]
Frequency—50/60 Hz[1]
Full load current—30 A[1]
Motor amps—13.6 A[1]
Conditioning arm sweep zones—10[4]
Pad conditioning zones—20[5]
Control interface—Color touch-screen GUI[5]
Carrier type—ViPRR[5]
Load station—Hydro-Lift[5]
Table and spindle motor control—Closed-loop RPM[5]
Pad conditioning type—In-situ and ex-situ[5]
Typical applications—Si and SiO2 polishing and planarizing[3]
Asset / model—Strasbaugh 6 EC[1]
Power—50/60 Hz, 3 phase, 208 V[1]
Motor current—13.6 motor amps[1]
Wafer size—100 mm[3]
Substrate chucks—3-inch and 4-inch wafers[2]
Functions—Si and SiO2 polishing and planarizing[3]
Programmable controls—fully programmable sweep, downpressure, table speed, time, slurry flow[2]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]nanofab.ece.cmu.edunanofab.ece.cmu.edu
  3. [3]nanofab.utah.edunanofab.utah.edu
  4. [4]cnfusers.cornell.educnfusers.cornell.edu
  5. [5]web.archive.orgweb.archive.org