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Comparison ledger

GSD 200 E High Currentversus0216 7696, E 11368072 ESC

Axcelis GSD 200 E High Current, Varian 0216 7696, E 11368072 ESC, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMAxcelisVarian
CategoryIon ImplantationIon Implantation
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAxcelis GSD 200 E High CurrentVarian 0216 7696, E 11368072 ESC
Specifications
Wafer size (variant 1)8 inch[1]—
Wafer size (variant 2)6 inch[2]—
TypeHigh Current Ion Implanter[1]ESC Platen ADV-S Type[3]
Configuration—Platen ADV-S Type[3]
Category—Ion Implantation[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]Equipment inventory listing
  3. [3]inventory listing
  4. [4]waferpedia.comwaferpedia.com