Comparison ledger
Axcelis 200 ACU, Ulvac NE-550, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 ACUAxcelis | NE-550Ulvac |
|---|---|---|
| OEM | Axcelis | Ulvac |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Ulvac NE-550 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | Parts Machine[2] | — |
| Manufacturer | Axcelis[2] | — |
| Model | 200 ACU[2] | — |
| Tool type | Asher[2] | — |
| Wafer size | 200mm[4] | — |
| Serial number | AU6A356AH[4] | — |
| Computer system | M 200 PC, M 200[5] | — |
| Part number | SC 4572 A[5] | — |
| Volts | 208[5] | — |
| Amps | 30[5] | — |
| Equipment type | Asher[2] | — |
| Wafer configuration | 8 inch[3] | — |
| Equipment name | — | Ulvac NE-550 Chlorine Etcher[6] |
| System type | — | Multipurpose high-density, low-pressure plasma etching system[6] |
| Performance note | — | Good uniformity and repeatability[6] |
| Materials etched | — | III-V, metals, ceramics, and optical materials[6] |
| Wafer Diameter(s) | — | 100 mm, 150 mm, 200 mm[7] |
| Batch sizes | — | 100 mm: 1, 150 mm: 1, 200 mm: 1[7] |
| Wafer thickness | — | 200 - 1000 µm[7] |
| Wafer materials | — | Pyrex (Corning 7740), quartz (fused silica), silicon on insulator, quartz (single crystal), silicon carbide, fused silica, silicon germanium, silicon[7] |
| Plasma Source | — | ISM (Inductively Super Magnetron)[1] |
| Electrode | — | STAR Electrode[1] |
| Wafer diameters | — | 100 mm, 150 mm, 200 mm[7] |
| Wafer thickness range | — | 200 – 1000 µm[7] |
| Batch sizes (wafers per run) | — | 100 mm: 1, 150 mm: 1, 200 mm: 1[7] |
| Electrode type | — | STAR Electrode[1] |
| End-point detection | — | Optical Emission EPD (optional), Laser Interference EPD (optional)[1] |
| Wafer temperature control | — | ESC with He cooling, Mechanical Chuck[1] |
| Maintenance | — | Simple maintenance mechanism[1] |
| Batch size | — | 1 wafer (100 mm, 150 mm, 200 mm)[7] |
| Wafer geometry | — | 1-flat, 2-flat, notched, no-flat[7] |
| Process type | — | High-density plasma etching[1] |
| Plasma source | — | ISM (Inductively Super Magnetron) Plasma Source[1] |
| Intended use | — | R&D test facilities such as universities and government agencies[1] |
| Location (UCLA) | — | CNSI Site[6] |
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