Comparison ledger
STS Multiplex ICP, Tegal 6540, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6540Tegal | |
|---|---|---|
| OEM | STS | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | down to 90nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | DOS | — |
| Generation | — | — |
| Family | STS Multiplex ICP | Tegal 6540 |
| Cited variants | — |
|
| Specifications | ||
| Tool type | load-locked, inductively coupled plasma etch system[2] | — |
| Process | deep silicon etching using the Bosch process[2] | — |
| Process gases | SF6, C4F8, O2, Ar[2] | — |
| Wafer size | 100 mm wafers[2] | 100mm – 200mm[1] |
| Carrier requirement | Wafers smaller than 100 mm and irregularly shaped samples must be placed on a 100 mm carrier[2] | — |
| Platen size | 100 mm[2] | — |
| ICP power range | 0–900 Watts[2] | — |
| Bias power range | 0–30 Watts[2] | — |
| MFC flow range - SF6 | 0–300 sccm[2] | — |
| MFC flow range - C4F8 | 0–200 sccm[2] | — |
| MFC flow range - O2 | 0–100 sccm[2] | — |
| MFC flow range - Ar | 0–100 sccm[2] | — |
| Pressure range | < 90 mTorr[2] | — |
| Backside cooling | Helium[2] | — |
| Clamping | Clamped[2] | — |
| Selectivity to photoresist | 50:1[2] | — |
| Selectivity to wet thermal SiO2 | 100:1[2] | — |
| Typical repeatable aspect ratio | 10:1[2] | — |
| OEM | STS[3] | — |
| Model | Multiplex ICP[3] | — |
| Wafer Size | 4 inches and 6 inches wafers[3] | — |
| Plasma Type | Inductively Coupled Plasma (ICP)[3] | — |
| RF Frequency (ICP source) | 13.56 MHz[3] | — |
| Substrate Bias Power (maximum) | 300 W[3] | — |
| Substrate Chuck Temperature | 20°C[3] | — |
| Substrate Clamping | Electrostatic clamping[3] | — |
| Load Lock Type | Transfer loadlock with high vacuum during loading/unloading[3] | — |
| Materials Etched | Insulators (SiO2, Si3N4, SiC), silicon, metals (Al Alloys, Pt, Ti), some polymers[3] | — |
| Type | load-locked inductively coupled plasma etch system[2] | high-density plasma etch system[5] |
| Wafer handling | smaller wafers and irregularly shaped samples placed on a 100 mm carrier[2] | — |
| Mask materials | photoresist and silicon dioxide (SiO2)[2] | — |
| Applications | etching insulators, silicon, metals, and some polymers[3] | — |
| Dedicated etch materials at CMi | metals, quartz, and polyimide[3] | — |
| Chuck | biasing chuck controlled in temperature[3] | — |
| Temperature control | 20°C[3] | — |
| Wafer sizes supported | 4 inches and 6 inches[3] | — |
| Max RF generator power | 300 W[3] | — |
| Control software | entirely computer controlled[3] | — |
| Endpoint detection | fitted with an End Point Detection (EPD) system[3] | — |
| Substrate holder RF biasing power | 300 W maximum[3] | — |
| Number of gas MFCs | 8[3] | — |
| Pumping system | 1000 l/s turbo pump[3] | — |
| Base pressure (without process) | few 10^-7 mb[3] | — |
| Wafer clamping | Electrostatic clamping with helium backside cooling[3] | — |
| End Point Detection | Yes[3] | — |
| Etching materials (general) | Insulators (SiO2, Si3N4, SiC), silicon, metals (Al alloys, Pt, Ti), polymers[3] | — |
| Al etch rate (standard Cl2/BCl3 process) | 0.2 to 0.5 um/min[3] | — |
| Si etch rate (standard Cl2 process) | 0.35 um/min[3] | — |
| Polyimide etch rate (oxygen chemistry) | >1 um/min[3] | — |
| Chemistry | chlorine and bromine chemistry[4] | — |
| Compatibility | microelectronic compatible equipment[4] | — |
| Chuck type | Electrostatic clamping and biasing chuck[3] | — |
| Wafer compatibility | Adaptable for 4 inches and 6 inches wafers[3] | — |
| Control | Entirely computer controlled[3] | — |
| End point detection | End Point Detection (EPD) system[3] | — |
| Bias RF power maximum | 300 W maximum[3] | — |
| ICP source | Antenna connected to an RF power supply and wrapped around an alumina cylinder[3] | — |
| Reactor | — | HRe reactor / HRe™ reactor[5] |
| Plasma technology | — | dual-frequency RF power technology / dual-frequency RF power application[5] |
| Plasma confinement | — | magnetic plasma confinement[5] |
| Optimized design rule | — | down to 0.13 micron[5] |
| RF power | — | dual-frequency RF power application[1] |
| Design rule | — | optimized for device design rules down to 90nm[1] |
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