Waferpedia

Comparison ledger

100 ICP FluorineversusPlasmalab 100 RIE

Oxford Instruments 100 ICP Fluorine, Oxford Instruments Plasmalab 100 RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
Plasmalab 100 RIEOxford Instruments
OEMOxford InstrumentsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorineOxford Instruments Plasmalab 100
Cited variants—
  • Plasmalab 100 Plus[1]
  • Plasmalab 100 RIE (FL)[2]
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[3]—
Cryo DRIE etch rateup to 5 µm/min[3]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[3]—
Voltage—208V, 50/60Hz[4]
Configuration—With VAT PM-5 Adaptive Pressure Controller[4]
Wafer Size—6 inch[4]
RF Generator—Advanced Energy RFX 600A, 600 W @ 13.56 MHz[2]
Electrode Temperature Range—10°C to 80°C[2]
Turbo Pump—Alcatel ATH 400M[2]
Turbo Pump Controller—Alcatel ACT 600M[2]
Pressure Controller—VAT PM-5 Adaptive Pressure Controller[4]
Number of Gas Lines—6 (with MFCs)[2]
Installed Gases—Ar, N2, CHF3, NF3, N2O[2]
Chiller—Thermo Neslab RTE7 Chiller and OptiTemp OTI-5WL-P3-216 Chiller[4]
Vacuum Pump—Leybold D65BCS Vacuum Pump with oil filter and exhaust filter[4]
Control System—Windows PC with user-friendly interface and blue PLC control architecture[2]
Platen Size—330 mm platen[2]
Load-locked—Yes[1]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]classoneequipment.comclassoneequipment.com
  2. [2]semistarcorp.comsemistarcorp.com
  3. [3]nanofab.utah.edunanofab.utah.edu
  4. [4]inventory listing