Comparison ledger
Nikon i 12 D, SUSS MicroTec MJB 3 350 W Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | i 12 DNikon | MJB 3 350 W MaskSUSS MicroTec |
|---|---|---|
| OEM | Nikon | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | Wafer Equipment | Wafer Equipment |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Nikon i 12 D | SUSS MicroTec MJB3 350W Mask |
| Specifications | ||
| Version | 150 mm[1] | — |
| Resolution | 0.35μm or less (High resolution, positive resist film of 1.0μm thickness )[1] | — |
| Configuration | Focus Calibration Repeatability:[1] | — |
| Measurement of Initial Heat | 180 min[1] | — |
| Measurement of Initial Cool | 240 min[1] | — |
| Reticle Blind Setting Accuracy | + 0.4 to + 0.8 mm (on reticle)[1] | — |
| Wafer size | Wafer Equipment[3] | Wafer Equipment[4] |
| - Model | — | MJB3 Main System[4] |
| - Manufacturer | — | Suss MicroTec / Karl Suss[4] |
| - Max Wafer Size | — | 3" Diameter[4] |
| - Eyepieces | — | 10x[4] |
| - Objectives | — | 3.5x and 10x[4] |
| - Exposure Mode | — | Vacuum Contact, Hard & Soft[4] |
| - Exposure Resolution | — | 0.8 Microns (under optimum conditions)[4] |
| - Alignment Resolution | — | 0.25um (operator dependant)[4] |
| Wafer Sizes | — | 3 inch[5] |
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