Waferpedia

Comparison ledger

2300 Flex 45versus100 ICP Fluorine

Lam Research 2300 Flex 45, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
2300 Flex 45Lam Research
100 ICP FluorineOxford Instruments
OEMLam ResearchOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLam Research 2300Oxford Instruments 100 ICP Fluorine
Specifications
ConfigurationMetal HP MWS[1]—
3 ChambersInsulating Film / Metal / Ashing[1]—
MakeLam[1]—
Model2300 Flex 45[1]—
Equipment typeEtcher[1]—
Chambers3 chambers[1]—
Process coverageInsulating film / Metal / Ashing[1]—
Gases used for insulating filmC4F8, CF4, CH3F[1]—
Gases used for metalCl2, BCl3[1]—
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[3]
Cryo DRIE etch rate—up to 5 µm/min[3]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]nanofab.utah.edunanofab.utah.edu