Comparison ledger
EV Group 6200 NT Semi Automated Bottom Side Alignment, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1505 G 6 ENikon | |
|---|---|---|
| OEM | EV Group | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 1988– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | EV Group 6200 | Nikon 1505 |
| Specifications | ||
| Configuration | Double side[1] | 5" reticle[3] |
| Exposure Modes | Hard, Soft, & Vacuum Contact[1] | — |
| Separation Distance | 0 - 300 µm adjustable via software[1] | — |
| Wafer Thickness | 0.1 - 10 mm (For Top Side)[1] | — |
| OEM | EV Group[1] | — |
| Model | 6200 NT Semi Automated Bottom Side Alignment[1] | 1505 G 6 E[3] |
| Tool type | Mask alignment system[2] | — |
| Lithography use | Optical double-side lithography[2] | — |
| Wafer/substrate size | Up to 200 mm / 8 inch[2] | — |
| Bottom side alignment | ≤ ± 1.0 µm[2] | — |
| Top side alignment | ≤ ± 0.5 µm[2] | — |
| Exposure source | Mercury light source / UV LED light source[2] | — |
| Exposure setup | Vacuum contact / hard contact / soft contact / proximity mode / flex mode[2] | — |
| Throughput | Up to 180 WPH in first print mode or up to 140 WPH in automatic alignment mode[2] | — |
| Resolution | — | 650 nm[4] |
| Numerical Aperture | — | 0.54[4] |
| Reduction | — | 5x[4] |
| Exposure Field | — | 15 x 15 mm[4] |
| Alignment Accuracy | — | 130 nm[4] |
| Wafer Size | — | 4 inch[3] |
| Light Source | — | g-line[5] |
| Introduction Year | — | 1988[4] |
| NA (Numerical Aperture) | — | 0.54[4] |
| Make | — | Nikon[3] |
| Category | — | Stepper[3] |
| Wafer Sizes | — | 4 inch[3] |
| Exposure type | — | g-line[4] |
| NA | — | 0.54[4] |
| Exposure field | — | 9.3 x 18.8 mm[4] |
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