Comparison ledger
Axcelis 200 ACU, Plasma-Therm 790 RIE-PECVD, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 ACUAxcelis | 790 RIE-PECVDPlasma-Therm |
|---|---|---|
| OEM | Axcelis | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Plasma-Therm Unaxis 790 |
| Specifications | ||
| Configuration | Parts Machine[1] | Single Chamber[5] |
| Manufacturer | Axcelis[1] | — |
| Model | 200 ACU[1] | — |
| Tool type | Asher[1] | — |
| Wafer size | 200mm[3] | — |
| Serial number | AU6A356AH[3] | — |
| Computer system | M 200 PC, M 200[4] | — |
| Part number | SC 4572 A[4] | — |
| Volts | 208[4] | — |
| Amps | 30[4] | — |
| Equipment type | Asher[1] | — |
| Wafer configuration | 8 inch[2] | — |
| Right chamber | — | CHF3 (54sccm), O2 (20sccm), H2 (20sccm), Ar (50sccm)[6] |
| Left chamber | — | Cl2 (20sccm), HBr (100sccm),[6] |
| Compatible Materials | — | Si (to etch with Cr mask, use the ORANGE RIE batchtop), TMDs, and Graphene[6] |
| Incompatible Materials | — | III-V / Hi K / Metal[6] |
| Voltage | — | 208V, 3 Phase[8] |
| Wafer sizes | — | 2, 3, 4, 5, 6, 8, 12 inch[6] |
| Chamber configuration | — | Single chamber[5] |
| Process gas supply (right chamber) | — | CHF3 (54sccm), O2 (20sccm), H2 (20sccm), Ar (50sccm)[6] |
| Process gas supply (left chamber) | — | Cl2 (20sccm), HBr (100sccm), O2 (20sccm), CF4 (50sccm), He (100sccm)[6] |
| Turbo pump base pressure | — | 10-5 Torr[6] |
| RF frequency | — | 13.56 MHz[7] |
| Electrical input | — | 200-220 Vac[7] |
| Number of process gases | — | 6[7] |
| Feature plate | — | Blank anodized aluminum[7] |
| Turbo pump capacity | — | 360 lps[7] |
| Electrode size | — | Dual 11 inch[8] |
| Voltage/phase | — | 208V, 3 phase[8] |
| Compatible materials | — | Si (with Cr mask), TMDs, Graphene[6] |
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