Comparison ledger
Axcelis 200 ACU, Oxford Instruments Plasmalab 180 ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 ACUAxcelis | Plasmalab 180 ICPOxford Instruments |
|---|---|---|
| OEM | Axcelis | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Oxford Instruments Plasmalab |
| Specifications | ||
| Configuration | Parts Machine[1] | For parts[5] |
| Manufacturer | Axcelis[1] | — |
| Model | 200 ACU[1] | — |
| Tool type | Asher[1] | — |
| Wafer size | 200mm[3] | — |
| Serial number | AU6A356AH[3] | — |
| Computer system | M 200 PC, M 200[4] | — |
| Part number | SC 4572 A[4] | — |
| Volts | 208[4] | — |
| Amps | 30[4] | — |
| Equipment type | Asher[1] | — |
| Wafer configuration | 8 inch[2] | — |
| Process type | — | ICP (Inductively Coupled Plasma) high-density etching system configured for reactive ion etching[6] |
| System type | — | Load-locked plasma etching system with ICP source[6] |
| Operation | — | Fully automatic computer-controlled operation[6] |
| Maximum substrate size | — | 150 mm[6] |
| Configured substrate size | — | 100 mm wafers[6] |
| Wafer clamping | — | Mechanical clamping[6] |
| Backside cooling | — | Helium cooling[6] |
| Vacuum system | — | Alcatel turbo pump with controller and roughing pump[6] |
| Gas box | — | Six MFC gas controllers[6] |
| Previously used process gases | — | CHF3/CHF4, C3F8, C4F8, argon, oxygen, hydrogen, chlorine[6] |
| Electrical rating | — | 208V, 3-phase, 50/60 Hz[6] |
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