Comparison ledger
Applied Materials 0010-13622 RF Match for, SPTS Sigma, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | SigmaSPTS |
|---|---|---|
| OEM | Applied Materials | SPTS |
| Category | Deposition | Deposition |
| Wafer size | — | A 1KW lamp for wafer heating |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | SPTS Sigma |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | Beta System[2] |
| Model | 0010-13622[1] | Sigma[2] |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| Phase | — | Power Box (415 VAC, 3 Phase)[2] |
| Station 1 | — | Vacuum Cassette Handler (VCH)[2] |
| Station 2 | — | Pre Heat Chambers[2] |
| Wafer size | — | A 1KW lamp for wafer heating[2] |
| Station 3 | — | Aluminum Dep Chamber[2] |
| Make | — | SPTS / STS[2] |
| Type | — | PVD (Physical Vapor Deposition)[2] |
| System configuration | — | Beta System[2] |
| Power box | — | 415 VAC, 3 Phase[2] |
| Process station 2 | — | Pre Heat Chambers[2] |
| Wafer heating | — | A 1KW lamp for wafer heating[2] |
| Process station 3 | — | Aluminum Dep Chamber[2] |
| Aluminum target | — | Al/0.5% Cu[2] |
| Process station 4 | — | Ti/TiN Dep chamber[2] |
| Titanium target | — | Ti 4N5[2] |
| Process station 5 | — | Soft Sputter Etch chamber[2] |
| Base pressure | — | 7E-8 Torr[2] |
| Station 4 RF generator | — | Advanced energy RFX-600 13.56 MHz RF generator[2] |
| Station 5 RF generator | — | Advanced energy RFX-600 A 13.56 MHz RF generator[2] |
| Station 4 | — | Ti/TiN Dep chamber[2] |
| Station 5 | — | Soft Sputter Etch chamber[2] |
| Station 6 | — | Vacuum Cassette Handler (VCH)[2] |
| Station 3 target | — | Aluminium target - Al/0.5% Cu[2] |
| Station 4 target | — | Titanium target - Ti 4N5[2] |
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