Comparison ledger
Tegal 6510, Tegal 915, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6510Tegal | 915Tegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | down to 90nm | — |
| Introduced | — | — |
| Production run | — | 1984– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 6510 | Tegal 915 |
| Specifications | ||
| Tool type | high-density CCP plasma etch tool[1] | — |
| RF power | dual-frequency RF power application[1] | — |
| Plasma confinement | magnetic plasma confinement[1] | — |
| Configuration | one or two HRē etch modules on a high-vacuum cluster platform[1] | — |
| Wafer size | 100mm – 200mm[1] | 100mm[4] |
| Optimization node | optimized for device design rules down to 90nm[1] | — |
| Process type | High-density CCP plasma etch[1] | — |
| RF configuration | Dual-frequency RF power application[1] | — |
| Magnetic confinement | Yes[1] | — |
| Modules | One or two HRe etch modules on a high-vacuum cluster platform[1] | — |
| Design rule | 90nm[1] | — |
| Batch capacity | — | Six cassettes of 100 mm wafers (150 pcs.) and four cassettes of 125 mm and 150 mm wafers (100 pcs.)[3] |
| Feed gases | — | Two independent feed gases[3] |
| Reaction chamber temperature control | — | Up to 100 degrees C[3] |
| Type | — | Plasma barrel etcher[3] |
| Production start | — | 1984[4] |
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