Comparison ledger
Raith EBPG5000, SUSS MicroTec MA / BA Gen4 Pro Series, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | EBPG5000Raith | MA / BA Gen4 Pro SeriesSUSS MicroTec |
|---|---|---|
| OEM | Raith | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | 150mm | 150mm |
| Process node | sub-10 nm | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | Gen4 |
| Family | Raith EBPG5000 | SUSS MicroTec MA / BA Gen4 Pro Series |
| Cited variants |
| |
| Specifications | ||
| Tool type | Ebeam lithography tool/system[1] | — |
| Feature capability | smaller than 10 nm features[1] | — |
| Placement accuracy | less than 20 nm[1] | — |
| Electron gun | 100 keV thermal field emission gun[1] | — |
| Beam type | Gaussian beam[1] | — |
| Pattern generator | 50 MHz[1] | — |
| Alignment | direct write mark detection and alignment software[1] | — |
| Wafer holders | 50 mm, 100 mm, and 150 mm wafers[1] | — |
| Mask holders | 5 inch masks and smaller piece parts[1] | — |
| Writing capability | 155 mm[2] | — |
| Maximum wafer size | up to 6 inches[2] | — |
| Maximum mask size | up to 6 inches[2] | — |
| Minimum feature size | less than 8 nm[2] | — |
| Field size | variable field size to 1 mm at all kVs[2] | — |
| Acceleration voltage | 100 keV[1] | — |
| Gun type | thermal field emission[1] | — |
| Pattern generator frequency | 50 MHz[1] | — |
| Overlay accuracy | <20 nm[1] | — |
| Wafer sizes supported | 50 mm, 100 mm, 150 mm[1] | — |
| Mask size supported | 5 inch[1] | — |
| Temperature control | 21°C ± 0.1°C[1] | — |
| Electron source type | Thermal Field Emission gun (TFE)[1] | — |
| Beam energy (EPFL EBPG5000ES) | 100 keV[1] | — |
| Pattern generator frequency (EPFL EBPG5000ES) | 50 MHz[1] | — |
| Minimum feature size (EPFL EBPG5000ES) | smaller than 10 nm[1] | — |
| Substrate support (EPFL EBPG5000ES) | holders for 50 mm, 100 mm, 150 mm wafers, 5‑inch masks and smaller piece parts[1] | — |
| Operating temperatures | 21 °C ± 0.1 °C (cleanroom environment)[1] | — |
| Model identifier (UChicago) | Raith EBPG5200 E-Beam lithography system (also called EBPG5000 Plus)[2] | — |
| Wafer size (UChicago model) | up to 6″ wafers[2] | — |
| Mask size (UChicago model) | up to 6″ masks[2] | — |
| Minimum feature size (UChicago model) | less than 8 nm[2] | — |
| Operating voltages (UChicago model) | 20, 50, and 100 kV[2] | — |
| Pattern generator frequency (UChicago model) | 50 / 100 MHz[2] | — |
| Minimum feature (EPFL EBPG5000ES) | smaller than 10 nm[1] | — |
| Electron source (EPFL EBPG5000ES) | 100 keV thermal field emission gun[1] | — |
| Pattern generator (EPFL EBPG5000ES) | 50 MHz[1] | — |
| Substrate holders (EPFL EBPG5000ES) | 50 mm, 100 mm, 150 mm wafers; 5-inch masks; smaller piece parts[1] | — |
| Cleanroom environment | custom cleanroom maintained at 21°C ± 0.1°C[1] | — |
| Minimum feature (PNF EBPG5200) | less than 8 nm[2] | — |
| Writing capability (PNF EBPG5200) | 155 mm[2] | — |
| Substrate sizes (PNF EBPG5200) | wafers up to 6 in; masks up to 6 in[2] | — |
| Acceleration voltages (PNF EBPG5200) | 20, 50, and 100 kV[2] | — |
| Pattern generator (PNF EBPG5200) | 50 / 100 MHz[2] | — |
| Field size (PNF EBPG5200) | variable field size to 1 mm at all kVs[2] | — |
| Electron source (PNF EBPG5200) | Thermal Field Emission gun[2] | — |
| Feature size | smaller than 10 nm features[1] | — |
| Gun | 100 keV thermal field emission gun[1] | — |
| Beam | Gaussian beam[1] | — |
| Holders | holders for 50 mm, 100 mm, and 150 mm wafers; 5 inch masks and smaller piece parts[1] | — |
| Wafer size | up to 6 inch wafers[2] | up to 150 mm / 200 mm[3] |
| Mask size | up to 6 inch masks[2] | — |
| Type | — | Semi-automated system[3] |
| Mask alignment | — | Yes[3] |
| Bond alignment | — | Yes[3] |
| Exposure | — | Yes[3] |
| UV bonding | — | Yes[3] |
| Fusion bonding | — | Yes[3] |
| Micro- and nanoimprinting | — | Yes[3] |
| Selective plasma activation | — | Yes[3] |
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