Comparison ledger
Oxford Instruments 100 ICP Fluorine, STS Multiplex ICP Advanced Oxide, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | |
|---|---|---|
| OEM | Oxford Instruments | STS |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | STS Multiplex ICP |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | — |
| Voltage | — | 208 V[2] |
| Configuration | — | 80 A[2] |
| Frequency | — | 60 Hz[2] |
| RF Generators | — | ENI ACG10B 1kW (13.56MHz)[2] |
| Clamp Type | — | Standard WTC[2] |
| Platen Type | — | Domed[2] |
| Turbo Pump | — | None[2] |
| MACs Robot | — | None[2] |
| Pumping System | — | None[2] |
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