Comparison ledger
Oxford Instruments 100 ICP Fluorine, Oxford Instruments Plasmalab 180 ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | Plasmalab 180 ICPOxford Instruments |
|---|---|---|
| OEM | Oxford Instruments | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Oxford Instruments Plasmalab |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | — |
| Configuration | — | For parts[2] |
| Process type | — | ICP (Inductively Coupled Plasma) high-density etching system configured for reactive ion etching[3] |
| System type | — | Load-locked plasma etching system with ICP source[3] |
| Operation | — | Fully automatic computer-controlled operation[3] |
| Maximum substrate size | — | 150 mm[3] |
| Configured substrate size | — | 100 mm wafers[3] |
| Wafer clamping | — | Mechanical clamping[3] |
| Backside cooling | — | Helium cooling[3] |
| Vacuum system | — | Alcatel turbo pump with controller and roughing pump[3] |
| Gas box | — | Six MFC gas controllers[3] |
| Previously used process gases | — | CHF3/CHF4, C3F8, C4F8, argon, oxygen, hydrogen, chlorine[3] |
| Electrical rating | — | 208V, 3-phase, 50/60 Hz[3] |
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