Waferpedia

Comparison ledger

510 Waferversus520

EV Group 510 Wafer, EV Group 520, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
510 WaferEV Group
520EV Group
OEMEV GroupEV Group
CategoryPackaging & BondingPackaging & Bonding
Wafer sizeManual wafer load substrate bonderManual wafer load substrate bonder
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyEV Group 510EV Group 520
Cited variants—
Specifications
ConfigurationRefurbished[2]Refurbished[5]
Wafer sizeManual wafer load substrate bonder[2]Manual wafer load substrate bonder[5]
Max Bond Force10 kN[2]7 kN[5]
Top side heater550°C max. in 1°C steps[2]—
Bottom side heater550°C max. in 1°C steps[2]—
Temperature uniformity± 1,5 % Turbo pump and controller[2]± 1,5 %[5]
ManufacturerEV Group[2]—
Model510 Wafer[2]520[5]
CategoryPackaging & Bonding[3]—
Wafer handlingManual wafer load substrate bonder[3]—
Bonding capabilityFusion and thermal compression bonding[2]—
Bond chamberHigh-vacuum capable bond chamber[3]High-vacuum capable bond chamber[5]
Control softwareWindows based control software and operation interface[2]Windows based control software and operation interface[5]
Turbo pump and controllerIncluded[2]—
Roughing pumpIncluded[2]—
System chillerIncluded[2]—
Load/unload toolIncluded[2]—
System computer, monitor, and keyboardIncluded[2]—
VacuumStandard: 0.1 mbar; optional: 1E-5 mbar[4]—
Max temperature550 °C[4]—
Loading chamberManual[4]—
Max contact force10, 20, 60 kN[4]—
Heater size150 mm, 200 mm[4]—
Single chips processingYes[4]—
Active water coolingFor bottom side[4]—
Power supply for anodic bondingMax voltage 2 kV; max current 50 mA[4]—
Phase—3 Phase[5]
Wafer Size—up to 150 mm capable[5]
Vacuum Chuck—6"/150mm diameter chuck[5]
Top Side Heater—550°C max. in 1°C steps[5]
Bottom Side Heater—550°C max. in 1°C steps[5]
OEM—EV Group[5]
Load type—Manual wafer load substrate bonder[5]
Wafer size (as configured)—6 inch[5]
Wafer size capability—up to 150 mm capable[5]
Max bond force (configured system)—7 kN[5]
Top side heater max temperature—550°C max. in 1°C steps[5]
Bottom side heater max temperature—550°C max. in 1°C steps[5]
Power requirements—50 / 60 Hz - 120 / 208 V - 3 Phase[5]
Bonding capability (configured system)—Fusion & thermal compression bonding; anodic bonding[5]
Bond tool cover—Auto opening of bond tool cover[5]
Chiller—Thermoflex 1400 Chiller (or equivalent)[5]
Pumping—Turbo pump and controller; roughing pump[5]
System configuration (EVG520 IS)—Single or dual chamber wafer bonding system[1]
Automation (EVG520 IS)—Fully automated processing with manual loading and unloading including external cooling station[1]
Aligner compatibility (EVG520 IS)—Compatible with EVG mechanical and optical aligners[1]
Chambers (EVG520 IS)—Single- or double-chamber automated system[1]
Cooling (EVG520 IS)—Integrated cooling station for high throughput; active water cooling top and bottom; integrated cooling optional[1]
Max contact force (EVG520 IS)—10, 20, 60, 100 kN[1]
Heater size (EVG520 IS)—150 mm, 200 mm[1]
Minimum substrate dimension (EVG520 IS)—single chips 100 mm[1]
Vacuum standard (EVG520 IS)—1E-5 mbar[1]
Vacuum optional (EVG520 IS)—1E-6 mbar[1]
Max temperature (EVG520 IS)—Standard: 550 °C; Optional: 650 °C[1]
Single chips processing (EVG520 IS)—Yes[1]
Loading chamber (EVG520 IS)—Manual[1]
Max bond chambers (EVG520 IS)—2[1]
Anodic bonding power supply (EVG520 IS)—Max. voltage: 2 kV; max. current: 50 mA[1]
Chuck / alignment systems (EVG520 IS)—150 mm heater: EVG 610, EVG 620, EVG 6200; 200 mm heater: EVG 6200, SmartView NT[1]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]evgroup.comevgroup.com
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com
  4. [4]evgroup.comevgroup.com
  5. [5]inventory listing