Waferpedia

Comparison ledger

510versus510 Wafer

EV Group 510, EV Group 510 Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
510EV Group
510 WaferEV Group
OEMEV GroupEV Group
CategoryPackaging & BondingPackaging & Bonding
Wafer size—Manual wafer load substrate bonder
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyEV Group 510EV Group 510
Specifications
Configuration230 / 400 V[1]Refurbished[2]
Power Consumption13,2 kW[1]—
Full Load Current Rating24,7 A[1]—
Largest Current Rating24,7 A[1]—
Vacuum PumpEdwards nXD 56 i Scroll Pump[1]—
Wafer size—Manual wafer load substrate bonder[2]
Max Bond Force—10 kN[2]
Top side heater—550°C max. in 1°C steps[2]
Bottom side heater—550°C max. in 1°C steps[2]
Temperature uniformity—± 1,5 % Turbo pump and controller[2]
Manufacturer—EV Group[2]
Model—510 Wafer[2]
Category—Packaging & Bonding[3]
Wafer handling—Manual wafer load substrate bonder[3]
Bonding capability—Fusion and thermal compression bonding[2]
Bond chamber—High-vacuum capable bond chamber[3]
Control software—Windows based control software and operation interface[2]
Turbo pump and controller—Included[2]
Roughing pump—Included[2]
System chiller—Included[2]
Load/unload tool—Included[2]
System computer, monitor, and keyboard—Included[2]
Vacuum—Standard: 0.1 mbar; optional: 1E-5 mbar[4]
Max temperature—550 °C[4]
Loading chamber—Manual[4]
Max contact force—10, 20, 60 kN[4]
Heater size—150 mm, 200 mm[4]
Single chips processing—Yes[4]
Active water cooling—For bottom side[4]
Power supply for anodic bonding—Max voltage 2 kV; max current 50 mA[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com
  4. [4]evgroup.comevgroup.com