Waferpedia

Comparison ledger

FPA 6000 ES 6 aversus150 e Mask

Canon FPA 6000 ES 6 a, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
150 e MaskSUSS MicroTec
OEMCanonSUSS MicroTec
CategoryLithographyLithography
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCanon FPA 6000SUSS MicroTec 150 e Mask
Specifications
Configuration248nm (KrF)[1]—
ManufacturerCanon[2]—
ModelFPA 6000 ES 6 a[1]—
Wafer size12 inch[1]—
Exposure wavelength248nm (KrF)[2]—
ProcessDUV (248nm) KRF[3]—
CategoryLithography[2]—
Tool typelithography scanner[2]—
Numerical aperture (NA)0.55 ~ 0.86[4]—
Resolution0.09µm[4]—
Reticle size6in. (0.25in. thick)[4]—
Reduction ratio4:1[4]—
Field size26mm x 33mm[4]—
Overlay accuracy≤8nm (M+3)[4]—
Throughput≥100wph (300mm, 122shots); ≥170wph (200mm, 58shots)[4]—
Scanner vintage2005[3]—

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]waferpedia.comwaferpedia.com
  3. [3]agsemiconductor.comagsemiconductor.com
  4. [4]generalmanual.comgeneralmanual.com