Comparison ledger
Axcelis NV GSD 200 Ion, Varian 160 XP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NV GSD 200 IonAxcelis | 160 XPVarian |
|---|---|---|
| OEM | Axcelis | Varian |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | 150mm | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Varian 160 XP |
| Cited variants | — |
|
| Specifications | ||
| Phase | 3 Phase[2] | — |
| Voltage | 208V, 710A[2] | — |
| Gases | B/As/Ar[2] | — |
| Total energy | 200 KEV[2] | — |
| Throughput | 210 pieces/hour[2] | — |
| Configuration | Features:[2] | — |
| Wafer size | 6 inch[2] | — |
| Power | 3 Phase, 208V, 710A[2] | — |
| Process gases | B/As/Ar[2] | — |
| SDS gas lines | 2 lines (ASH3 and PH3)[2] | — |
| HP gas lines | 2 lines (BF3 and ARGON)[2] | — |
| Cassette | 25 slots, 4 cassettes capacity[2] | — |
| Source head | ELS source head[2] | — |
| Control hardware | 2 SUN Workstations, VME 177 cell controller[2] | — |
| Post acceleration high voltage | 80 KEV[2] | — |
| Drive | Belt type rotary drive[2] | — |
| Implant angle | Variable, 2-axis[2] | — |
| Dose controller | Real-time patented dose controller[2] | — |
| Dose range | 5E11~1E16 Ions/cm2[2] | — |
| Arm | Std Arm 150mm[2] | — |
| Wafer holder | Std 150mm[2] | — |
| Beam energy | 5 KeV[2] | — |
| Beam current | 50 mA[2] | — |
| Electron shower | P-Shower electron shower[2] | — |
| CE marking | CE marked[2] | — |
| Beam Current | 50 mACE marked[2] | — |
| Configuration (160 XP Ion variant) | — | 150mm High Current IMP[1] |
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