Comparison ledger
ASML TWINSCAN EXE:5200B, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1505 G 6 ENikon | |
|---|---|---|
| OEM | ASML | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | sub-2 nm Logic, leading-edge DRAM | — |
| Introduced | — | — |
| Production run | — | 1988– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | High NA | — |
| Family | ASML TWINSCAN EXE:5200B | Nikon 1505 |
| Cited variants |
| — |
| Specifications | ||
| Technology | Extreme Ultraviolet (EUV) lithography[1] | — |
| Numerical aperture (NA) | 0.55[1] | — |
| Wavelength | 13.5 nm[1] | — |
| Resolution | 8 nm[1] | 650 nm[3] |
| Stage type | Dual-stage[1] | — |
| Configuration | — | 5" reticle[2] |
| Numerical Aperture | — | 0.54[3] |
| Reduction | — | 5x[3] |
| Exposure Field | — | 15 x 15 mm[3] |
| Alignment Accuracy | — | 130 nm[3] |
| Wafer Size | — | 4 inch[2] |
| Light Source | — | g-line[4] |
| Introduction Year | — | 1988[3] |
| NA (Numerical Aperture) | — | 0.54[3] |
| Make | — | Nikon[2] |
| Model | — | 1505 G 6 E[2] |
| Category | — | Stepper[2] |
| Wafer Sizes | — | 4 inch[2] |
| Exposure type | — | g-line[3] |
| NA | — | 0.54[3] |
| Exposure field | — | 9.3 x 18.8 mm[3] |
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