Comparison ledger
ASML 5500, SUSS MicroTec ACS200, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 5500ASML | ACS200SUSS MicroTec |
|---|---|---|
| OEM | ASML | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | 100mm | 100mm |
| Process node | 248 nm (KrF) DUV | — |
| Introduced | — | — |
| Production run | 1991– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | i-line |
| Family | ASML 5500 | SUSS MicroTec ACS200 |
| Cited variants | — | |
| Specifications | ||
| Manufacturer | ASML[1] | — |
| Model | PAS 5500/300[1] | — |
| Description | Deep-UV Stepper Photolithography[1] | — |
| Exposure wavelength | 248 nm (KrF)[1] | — |
| Configured wafer size | 4 in wafers[1] | — |
| Maximum wafer size | 4 in (100 mm) wafers with SEMI standard wafer flat (not notch)[1] | — |
| Layer-to-layer overlay accuracy | better than 30 nm[1] | — |
| Minimum feature size | ≤150 nm isolated lines; ≤200 nm dense patterns[1] | — |
| Full-field useable exposure area | intersection of a 31 mm diameter circle and a 22 mm x 27 mm rectangle[1] | — |
| Sample size | 100 mm wafers with SEMI std. major flat[1] | — |
| Alignment accuracy | < 50 nm[1] | — |
| Wafer thickness | minimum approximately 200 µm; maximum approximately 1.1 mm[1] | — |
| Maximum dose | ~100 mJ[1] | — |
| Minimum Feature Size (dense) | ≤200 nm[1] | — |
| Minimum Feature Size (isolated lines) | ≤150 nm[1] | — |
| Overlay Accuracy | Better than 30 nm[1] | — |
| Maximum Field Size (usable exposure area) | 22 mm x 27 mm rectangle within a 31 mm diameter circle[1] | — |
| Wafer Size (standard) | 4 inch (100 mm)[1] | — |
| Throughput | Typically minutes per wafer (multiple 4-inch wafers)[1] | — |
| Reduction Ratio | 5x (for some variants, e.g., /200 and /60)[2] | — |
| Numerical Aperture (variable) | 0.48-0.60 (for /200 variant)[2] | — |
| Alignment Accuracy | < 50 nm (for /300 variant)[1] | — |
| Resolution (PAS 5500/300) | ≤150 nm isolated lines, ≤200 nm dense patterns[1] | — |
| Exposure wavelength (PAS 5500/60) | 365 nm[3] | — |
| Reduction ratio (PAS 5500/60) | 5:1[3] | — |
| Wafer size (PAS 5500/300) | 100 mm (4 inch) wafers with SEMI standard flat[1] | — |
| Overlay accuracy (PAS 5500/300) | better than 30 nm[1] | — |
| Resolution (PAS 5500/200) | 350 nm[2] | — |
| Numerical aperture (PAS 5500/200) | 0.48-0.60 variable[2] | — |
| Maximum field size (PAS 5500/200) | 22x22 mm[2] | — |
| Minimum feature size (PAS 5500/60) | 450 nm[3] | — |
| Tool type | — | Modular cluster tool[5] |
| Process | — | Coating and development of i-line photoresists[5] |
| Loading/unloading ports | — | Two loading/unloading ports: one cassette for coating and one cassette for development[5] |
| Wafer centering | — | Wafer centering station[5] |
| Spin-coating modules | — | Two spin-coating modules[5] |
| Development module | — | One development module with puddle and spray options[5] |
| Hotplates and coolplates | — | Two stacks of hotplates (9 in total) and coolplates (3 in total)[5] |
| HMDS priming | — | Additional HMDS-priming module[5] |
| Wafer handling | — | Standard SEMI-wafers of 100 mm and 150 mm diameter[5] |
| Supported wafer materials | — | Opaque wafers (silicon, SOI) and transparent wafers (glass, fused-silica, sapphire)[5] |
| Photoresists available | — | AZ ECI 3007, AZ ECI 3027, AZ 10XT-20, AZ 10XT-60, AZ 15nXT, AZ 40XT[5] |
| Wafer diameter supported | — | 100mm and 150mm (on request)[5] |
| Wafer types | — | Opaque (silicon, SOI) and transparent (glass, fused-silica, sapphire)[5] |
| Number of spin-coating modules | — | 2[5] |
| Number of development modules | — | 1[5] |
| Number of hotplates | — | 9 (total across two stacks)[5] |
| Number of coolplates | — | 3[5] |
| HMDS priming module | — | Yes (included)[5] |
| Robot model | — | Sankyo SC5000[5] |
| Photoresist type | — | i-line[5] |
| Voltage | — | 400 V[6] |
| Phase | — | 3 Phase[6] |
| Frequency | — | 60 Hz[6] |
| Thermal modules | — | Two stacks of hotplates (9 in total) and coolplates (3 in total), including an additional HMDS-priming module[5] |
| Wafer material | — | Opaque wafers (silicon, SOI) and transparent wafers (glass, fused-silica, sapphire)[5] |
| Central robot | — | Individual processing modules are fed by a central robot[5] |
| Robot | — | central robot feeding the individual processing modules[5] |
| Supported wafer diameters | — | 100 mm and 150 mm diameter[5] |
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