Comparison ledger
ASML 5500, OAI 808, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 5500ASML | 808OAI |
|---|---|---|
| OEM | ASML | OAI |
| Category | Lithography | Lithography |
| Wafer size | 100mm | 100mm |
| Process node | 248 nm (KrF) DUV | — |
| Introduced | — | — |
| Production run | 1991– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASML 5500 | OAI 808 |
| Cited variants | — | |
| Specifications | ||
| Manufacturer | ASML[1] | — |
| Model | PAS 5500/300[1] | OAI 808 Aligner[5] |
| Description | Deep-UV Stepper Photolithography[1] | Semi-automated, four-camera, optical front- and backside mask aligner[6] |
| Exposure wavelength | 248 nm (KrF)[1] | 350 · ´50 nm[5] |
| Configured wafer size | 4 in wafers[1] | — |
| Maximum wafer size | 4 in (100 mm) wafers with SEMI standard wafer flat (not notch)[1] | — |
| Layer-to-layer overlay accuracy | better than 30 nm[1] | — |
| Minimum feature size | ≤150 nm isolated lines; ≤200 nm dense patterns[1] | — |
| Full-field useable exposure area | intersection of a 31 mm diameter circle and a 22 mm x 27 mm rectangle[1] | — |
| Sample size | 100 mm wafers with SEMI std. major flat[1] | — |
| Alignment accuracy | < 50 nm[1] | Top side alignment: ± 1.0µm 3σ; bottom side alignment: ± 1.25µm 3σ; large gap alignment: option / ± 1.5µm 3σ[5] |
| Wafer thickness | minimum approximately 200 µm; maximum approximately 1.1 mm[1] | — |
| Maximum dose | ~100 mJ[1] | — |
| Minimum Feature Size (dense) | ≤200 nm[1] | — |
| Minimum Feature Size (isolated lines) | ≤150 nm[1] | — |
| Overlay Accuracy | Better than 30 nm[1] | — |
| Maximum Field Size (usable exposure area) | 22 mm x 27 mm rectangle within a 31 mm diameter circle[1] | — |
| Wafer Size (standard) | 4 inch (100 mm)[1] | — |
| Throughput | Typically minutes per wafer (multiple 4-inch wafers)[1] | — |
| Reduction Ratio | 5x (for some variants, e.g., /200 and /60)[2] | — |
| Numerical Aperture (variable) | 0.48-0.60 (for /200 variant)[2] | — |
| Alignment Accuracy | < 50 nm (for /300 variant)[1] | — |
| Resolution (PAS 5500/300) | ≤150 nm isolated lines, ≤200 nm dense patterns[1] | — |
| Exposure wavelength (PAS 5500/60) | 365 nm[3] | — |
| Reduction ratio (PAS 5500/60) | 5:1[3] | — |
| Wafer size (PAS 5500/300) | 100 mm (4 inch) wafers with SEMI standard flat[1] | — |
| Overlay accuracy (PAS 5500/300) | better than 30 nm[1] | — |
| Resolution (PAS 5500/200) | 350 nm[2] | — |
| Numerical aperture (PAS 5500/200) | 0.48-0.60 variable[2] | — |
| Maximum field size (PAS 5500/200) | 22x22 mm[2] | — |
| Minimum feature size (PAS 5500/60) | 450 nm[3] | — |
| Type | — | semi-automated, four-camera, optical front- and backside mask aligner[5] |
| Motorized features | — | motorized backside focus, motorized auto leveling, auto gap setting[5] |
| Size | — | 2", 100mm, 150mm, 200mm pieces[5] |
| Mask size | — | 4"x4"; 5"x5", 7"x7", and 9"x9"[5] |
| Top side alignment accuracy | — | ± 1.0µm 3σ[5] |
| Bottom side alignment accuracy | — | ± 1.25µm 3σ[5] |
| Large gap alignment accuracy | — | Option / ± 1.5µm 3σ[5] |
| Resolution | — | Vacuum + Hard Contact ≤ 1 µm; Hard Contact ≤ 1.5 µm; Soft Contact ≤ 2.0 µm; Proximity ≥ 3.0 µm[5] |
| Mercury arc lamp | — | 350 W[5] |
| Lamp | — | Mercury arc lamp, 350 W[5] |
| Supported substrate sizes | — | 5 mm to 200 mm[5] |
| Thickness | — | 0.1–10 mm[5] |
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