Comparison ledger
Applied Materials Centura I Phase II Oxide, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura I Phase II OxideApplied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | Upgradable to 8"[1] | — |
| Need to replace | 5-phase motor driver, indexer, turbo pump and controller, e-chuck, MFC's[1] | — |
| Wafer size (original) | 6 inch[1] | — |
| Wafer size (upgrade target) | 8 inch (200 mm)[1] | — |
| Wafer size (alternate configuration) | 200 mm[2] | — |
| Model designation alternative | 5200 Centura I Phase II[2] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[3] |
| Cryo DRIE etch rate | — | up to 5 µm/min[3] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[3] |
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