Comparison ledger
Applied Materials Centura 5200 MXP+, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura 5200 MXP+Applied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura 5200 | Oxford Instruments 100 ICP Fluorine |
| Cited variants |
| — |
| Specifications | ||
| Configuration | Components:[2] | — |
| ESC Type | Polymide[2] | — |
| Endpoint | Monochromator[3] | — |
| Gases Used | NF3, CH3F, CL2, HBr, CHF3, Ar, CF4, O2, N2, C4F8, CO[2] | — |
| Mass Flow Controllers (MFCs) | 32 Digital MFCs (14-Unit or 18-Horiba)[2] | — |
| Software Version | 4.9_15[4] | — |
| Dry Pumps | IQDP80 (x4) / IQDP80/WSU151 (x2)[3] | — |
| Chillers | Neslab 150 units (x5)[2] | — |
| Mainframe | SHO[5] | — |
| Gas Panel Type | Standard[5] | — |
| Voltage | 208 VAC, 3 Phase, 240 A, 50/60 Hz[5] | — |
| System Controller | Standard[5] | — |
| Fab Installation | TTW[5] | — |
| System Umbilicals | 50 ft - standard[5] | — |
| Heat Exchanger Type 1 | AMAT 0[5] | — |
| Heat Exchanger Type 2 | Neslab[5] | — |
| Loadlock pump | Ebara[5] | — |
| Pump Size | A 10[5] | — |
| I/O Slit Valve Type | Viton[5] | — |
| HF RF Gen Type | ENI OEM 12B-3[5] | — |
| Etch RF Match Type | Phase 4[6] | — |
| FAB Monitor | TTW[5] | — |
| Liquid Delivery | None[5] | — |
| LF RF Gen Type | None[5] | — |
| Chamber A | MXP[5] | — |
| Slit Valve Type | Anodized[5] | — |
| Chamber A Process | Oxide[5] | — |
| Process Kit Type | Oxide Etch ESC[5] | — |
| Manufacturer | Applied Materials[2] | — |
| Model | Centura 5200 MXP+[2] | — |
| Category | Etch[6] | — |
| Wafer size | 200 mm[3] | 4 inch, 6 inch, 8 inch (with clamp change)[7] |
| Configured for | 200 mm[3] | — |
| HF RF generator type | ENI OEM 12B-3[6] | — |
| LF RF generator type | None[6] | — |
| Vacuum pumps | IQDP80 (x4) / IQDP80/WSU151 (x2)[2] | — |
| Robot | HP Robot[4] | — |
| Gas delivery | 32 Digital MFCs (14-Unit or 18-Horiba)[6] | — |
| Control software | 4.9_15[3] | — |
| Configured wafer size | 200 mm[4] | — |
| Gas set | NF3, CH3F, CL2, HBr, CHF3, Ar, CF4, O2, N2, C4F8, CO[2] | — |
| Mass flow controllers | 32 Digital MFCs 14-Unit or 18-Horiba[3] | — |
| Dry pumps | 4-IQDP80, 2-IQDP80/WSU151[3] | — |
| Components | Orienter (x1), MxP Poly (x1), MxP+ Poly (x2), eMxP+ (x1)[2] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[7] |
| Cryo DRIE etch rate | — | up to 5 µm/min[7] |
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