Comparison ledger
Applied Materials 0010-13622 RF Match for, Oxford Instruments OpAL, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | OpALOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Oxford Instruments OpAL |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | Single open loop chamber (non-loadlocked)[2] |
| Model | 0010-13622[1] | — |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| Heated table | — | 80-300ºC[2] |
| Voltage | — | 208V, 3Ph, 60Hz, 25A[2] |
| Type | — | atomic layer deposition (ALD) reactor[3] |
| Operation | — | plasma assisted and thermal[3] |
| Chamber | — | single open load chamber (non-loadlocked)[4] |
| Precursors | — | three precursors-inputs plus a separate H2O precursor input[3] |
| Gas channels | — | two channels for metal organic precursors: 1 for water and a plasma head[2] |
| Heated table temperature | — | 80-300ºC[2] |
| Heated sidewalls | — | 8.25"[2] |
| Plasma head | — | downstream 300 W RF plasma head with isolation valve[2] |
| Control software | — | software to run loops of dose/purge cycles[2] |
| Sample size compatibility | — | up to 200 mm wafers[4] |
| Maximum substrate diameter | — | 200 mm[3] |
| Process temperature range | — | ambient to 400 °C (typical for thermal ALD)[5] |
| Precursor channels | — | 4 independent, pneumatically actuated dose lines with heated delivery paths[5] |
| System footprint | — | approx. 1200 × 1800 × 800 mm[5] |
| Mass | — | ~450 kg[5] |
| Uniformity | — | <±1.5% across 200 mm Si wafers[5] |
| Plasma integration | — | optional in-situ RF (13.56 MHz) or microwave (2.45 GHz) source, field-upgradeable[5] |
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