Comparison ledger
ABM -407B-1-S-CES293 Robot, Nikon NSR SF 200, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NSR SF 200Nikon | |
|---|---|---|
| OEM | ABM | Nikon |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ABM -407B-1-S-CES293 Robot | Nikon NSR |
| Specifications | ||
| Model | ABM-407B-1-S-CES293[1] | — |
| Description | ROBOT[1] | — |
| Refurbished RTP RTA | AG Associates 4100, 4108, 8108, 8800, 8800i,210, 310, 410, 610, 610I, MPT RTP-600S, 800S, RTP-3000[1] | — |
| KLA-Tencor Spare Parts and Service | RS-35C,RS-55,RS-75,RS-100,UV-1050,UV-1080,UV-1250,UV-1280,ASET F5 / F5X,AIT Systems,HRP-220 Stylus Profiler[1] | — |
| Refurbished Isotropic Plasma Etcher | Matrix, Tegal, Lam Research, Branson/IPC, PlasmaTherm[1] | — |
| Refurbished PECVD, ALD Equipment | Cambridge, Oxford PlasmaLab , Plasma-Therm, STS/SPTS, AMAT[1] | — |
| Refurbished Mask Aligner | Canon Neutronix PLA501/545, Suss MA200CC, MA8BA8 GEN3, MA8BA8 GEN2, MA8BA8, MA200E[1] | — |
| Refurbished Bonding | SUSS SB6E, SUSS SB8E, EVG 620 BA, EVG EV501, West Bond 7200AR 7400A[1] | — |
| Refurbished Wafer Prober | Electroglas EG 4090u+, EG 4090, EG 2001X, EG 1034X, Cascade PS-21[1] | — |
| Configuration | — | HDD not included[2] |
| Chamber Type | — | Asahi[2] |
| Reticle Size | — | 6"[2] |
| Field Size | — | 26[2] |
| RL Linrary | — | L10+10[2] |
| Reticle PD/PPD | — | YEs[2] |
| Reticle SMIF | — | No[2] |
| Wafer Chuck Type | — | Pin[2] |
| Wafer Loader Type | — | Type 3[2] |
| Pre Alignment 2 | — | OF[2] |
| In-Line | — | Right[2] |
| Wafer Carrier Table | — | Right[2] |
| Alignment Sensor | — | LSA/FIA/LIA[2] |
| Mini Computer | — | Alpha[2] |
| Software Version | — | MCSV: Ver E5.21F Tool[2] |
| Laser | — | Gigaphoton G21K2[2] |
| Laser Total Shot | — | 19420.349 Mpls[2] |
| Wavelength | — | 248 nm[3] |
| Lens NA | — | 0.63[3] |
| Exposure Area | — | 26 mm x 33 mm[3] |
| Reduction Ratio | — | 1/4[3] |
| Resolution | — | < 150 nm[3] |
| Throughput (300 mm) | — | > 110 wafers/hour[3] |
| Throughput (200 mm) | — | > 120 wafers/hour[3] |
| Wafer Size (stated by source) | — | 200/300 mm[3] |
| Wafer Size (other source) | — | 6 inch[2] |