Comparison ledger
Tegal 901ACS, Tegal 903ACS, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 901ACSTegal | 903ACSTegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | 75 mm, 100 mm, 125 mm, and 150 mm diameter wafers; 4-inch square wafers | 75 mm, 100 mm, 125 mm, and 150 mm diameter wafers; 4-inch square wafers |
| Process node | 1 micron | 1 micron |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 901ACS | Tegal 903ACS |
| Cited variants |
| |
| Specifications | ||
| System type | Wide-gap diode reactor system[1] | — |
| Process type | Low-temperature plasma etch operations[1] | Reactive ion etching (RIE)[1] |
| Wafer diameters | 75 mm, 100 mm, 125 mm, and 150 mm diameter wafers[1] | — |
| Square wafer size | 4-inch square wafers[1] | — |
| Minimum feature size | 1 micron[1] | 1 micron[1] |
| Reactor type | — | Narrow gap diode reactor system[1] |
| Substrates | — | Silicon, gallium-arsenide (Ga-As), indium-phosphide (In-P), and silicon-germanium (Si-Ge)[1] |
| Materials etched | — | Silicon dioxide, silicon nitride, and silicon carbide[1] |
| Wafer sizes | — | 75 mm, 100 mm, 125 mm, and 150 mm diameter wafers; 4-inch square wafers[1] |
| Etch applications | — | Tightly controlled, anisotropic etching of silicon dioxide and silicon nitride insulating layers[1] |
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