Comparison ledger
PVA TePla 300, Tokyo Electron Act 12 DUV Photoresist Coater Developer Track, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 300PVA TePla | Act 12 DUV Photoresist Coater Developer TrackTokyo Electron |
|---|---|---|
| OEM | PVA TePla | Tokyo Electron |
| Category | Resist Processing | Resist Processing |
| Wafer size | 75 mm to 100 mm | The direction of wafer flow is right to left |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | PVA TePla 300 | Tokyo Electron Act 12 |
| Cited variants | — | |
| Specifications | ||
| Plasma type | High frequency plasma[2] | — |
| Plasma frequency | 2.45 GHz[2] | — |
| Plasma power | 200 to 1000 W[2] | — |
| Gas | O2 (max. flow 500 ml/min)[2] | — |
| Chamber | Quartz primary vacuum chamber, Dint. 245 mm x Prof. 380 mm[2] | — |
| Wafer capacity | Quartz holders for 25 wafers[2] | — |
| Wafer size range | 75 mm to 100 mm[2] | — |
| Micro-electronic compatibility | Not micro-electronic compatible[2] | — |
| Category | Plasma etcher (resist strip / surface activation)[2] | Resist Processing[4] |
| Positive resist etch rate | 350 nm/min[2] | — |
| Compatibility | Not micro-electronic compatible; gold allowed; Si, glass, Pyrex wafers[2] | — |
| Power Range | 200 to 1000 W (or 0-1000 W)[2] | — |
| Process Gases | O2, Ar, N2, CF4[3] | — |
| Chamber Material | Quartz[2] | — |
| Chamber Dimensions (internal) | Diameter 245 mm x Depth 380 mm[2] | — |
| Wafer Holder Capacity | 25 wafers[2] | — |
| Wafer Size | 75 mm to 100 mm[2] | — |
| Wafer Size (alternate) | up to 6 inches[1] | — |
| Process Pressure | 0.6 to 1.5 mbar[1] | — |
| Restricted Materials | Materials that deteriorate in oxygen (Ag, Cu, Cr, Fe, etc.) should not be processed; no Cr or other metals in chamber[2] | — |
| Microwave frequency | 2.45 GHz[2] | — |
| Power range | 200 to 1000 W[2] | — |
| Batch size | Up to 25 wafers[2] | — |
| Wafer diameter (standard carrier) | 75 mm to 100 mm[2] | — |
| Process gases | O2, CF4, Ar, N2[3] | — |
| Maximum O2 flow | 500 ml/min[2] | — |
| Chamber dimensions (internal diameter x depth) | 245 mm x 380 mm[2] | — |
| Chamber internal dimensions | Dint. 245 mm x Prof. 380 mm[2] | — |
| Gas 1 | O2 (max. flow 500 ml/min)[2] | — |
| Resist strip etch rate | 350 nm/min depending on number of wafers[2] | — |
| Faraday cage | Available[2] | — |
| Process gas | O2 (max flow 500 ml/min)[2] | — |
| Chamber dimensions | Quartz primary vacuum chamber, Dint. 245 mm x Prof. 380 mm[2] | — |
| Process type | High-frequency plasma[2] | — |
| Applications | Photoresist stripping; wafer surface cleaning; hydrophilic surface activation of plastics surfaces[2] | — |
| Carrier capacity | Quartz holders for 25 wafers[2] | — |
| Not micro-electronic compatible | This equipment is NOT micro-electronic compatible.[2] | — |
| Wafer size | — | The direction of wafer flow is right to left[4] |
| Configuration | — | Type 4 Main controller[4] |
| OEM | — | Tokyo Electron[4] |
| Model | — | Act 12 DUV Photoresist Coater / Developer Track[4] |
| Wafer flow direction | — | right to left[4] |
| Main controller | — | Type 4[4] |
| Load ports | — | 4 FOUP load ports for 12 inch wafers[4] |
| COT units | — | 2[4] |
| BARC units | — | 2[4] |
| DEV units | — | 4[4] |
| WEE unit | — | 1[4] |
| ADH units | — | 2[4] |
| Closed loop T&H system | — | Included[4] |
| IFB | — | for wafer transport system NIKON NSR-S204B[4] |
| Vintage | — | 2009[4] |
Plan your fab
Building a Resist Processing process? Get a complete equipment list.
Open the fab equipment planner →