Comparison ledger
Plasma-Therm 770, Tokyo Electron Unity Me, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 770Plasma-Therm | Unity MeTokyo Electron |
|---|---|---|
| OEM | Plasma-Therm | Tokyo Electron |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm 770 | Tokyo Electron Unity Me |
| Specifications | ||
| Manufacturer | Plasmatherm (Unaxis)[1] | — |
| Model | Plasma-Therm 770 SLR series[1] | — |
| Tool type | Dry Etch[1] | Automatic plasma etching production tool[4] |
| System type | Fluorine-based ICP etcher with loadlock[1] | — |
| Plasma source | Inductively Coupled Plasma (ICP) coil[1] | — |
| Substrate bias | Capacitively coupled substrate RF supply[1] | — |
| ICP coil power | 1000 W at 2 MHz[1] | — |
| Substrate bias power | 500 W at 13.56 MHz[1] | — |
| Available gases | C4F8, SF6, O2, Ar, N2, CHF3, CF4[1] | — |
| Backside cooling | Helium backside cooling[1] | — |
| Chuck temperature | 10°C standard[1] | — |
| Wafer handling | Single 100 mm / 4-inch wafer handling with physical topside clamp contacting the outer 5 mm of the wafer[1] | — |
| Control system | Windows-based computer control of process and wafer handling[1] | — |
| Endpoint monitoring | In-situ laser monitor with camera and simulation software[1] | — |
| Number of MFC gas controllers | 8[2] | — |
| Gases (chlorine configuration) | N₂, O₂, CHF₃, AR, CH₄, CL₂, BCL₃, CF₄[2] | — |
| Wafer size range (with appropriate kit) | 2" to 8"[2] | — |
| Gases (previous usage, chlorine configuration) | N₂, O₂, He, CHF₃, Cl₂, BCl₃[3] | — |
| Equipment type | — | Automatic plasma etching production tool[4] |
| OEM | — | Tokyo Electron (TEL)[4] |
| Configured wafer size | — | 100mm[4] |
| Available cassette loader | — | C1 for 100mm wafers[4] |
| Process chamber | — | DRM (Dipole Ring Magnet) chamber[4] |
| DRM chamber type | — | RIE chamber with assistance of a magnetic field[4] |
| Optimized application | — | Etching dielectrics such as SiO2 and SixNy[4] |
| Chamber type | — | DRM (Dipole Ring Magnet) RIE chamber[4] |
| Wafer size | — | 100mm[4] |
| Process gases | — | C4F8 (30 sccm), CF4 (100 sccm), CHF3 (100 sccm), CH2F2 (100 sccm), O2 (30 sccm and 1000 sccm), N2 (100 sccm), Ar (1000 sccm)[4] |
| Process: CMI.BARC (BARC open) | — | Gap: 47 mm, SH temp: 40°C, Chemistry: CF4, Mask: JSR M108Y, JSR M35G, DUV42P; Etch rates: DUV42P 110 nm/min, M108Y/M35G 110 nm/min, SiO2 170 nm/min, Si 85 nm/min; Selectivity 1:1[4] |
| Process: CMI.OX.PR (SiO2 etch with PR mask) | — | Gap: 47 mm, SH temp: 40°C, Chemistry: C4F8 O2 Ar, Mask: PR; Etch rates: SiO2 440 nm/min @600W, 230 @500W, 200 @400W, 160 @300W, 125 @200W, 85 @100W; Selectivity >3:1[4] |
| Process: CMI.OX.ASI (SiO2 etch with aSi mask) | — | Gap: 47 mm, SH temp: 40°C, Chemistry: CH2F2 C4F8 O2 Ar, Mask: aSi; Etch rates: SiO2 450 nm/min, aSi 35 nm/min, JSR M108Y 130 nm/min; Selectivity 12:1[4] |
| Process: CMI.SIN.OX (Si3N4 etch) | — | Gap: 37 mm, SH temp: 40°C, Chemistry: CH2F2 O2 Ar, Mask: HSQ, PR; Etch rates: Si3N4 130 nm/min, Si 25 nm/min, HSQ 80 nm/min, PR 125 nm/min; Selectivity >1:1[4] |
| Chamber dedication | — | Dedicated to and optimized for etching dielectrics (e.g. SiO2 and SixNy)[4] |
| Available process gases | — | C4F8 [30 sccm], CF4 [100 sccm], CHF3 [100 sccm], CH2F2 [100 sccm], O2 [30 sccm & 1000 sccm], N2 [100 sccm], Ar [1000 sccm][4] |
| Cassette loader | — | C1 for 100mm wafers[4] |
| Transfer chamber | — | One transfer chamber (T/C)[4] |
| Unavailable modules at EPFL CMi | — | C2 cassette loader and P2 SCCM (Super Capacitively Coupled Module) process chamber are offline[4] |
| Metallic contamination restriction | — | The TEL etcher must NOT be exposed to any metallics or even traces of metallics; wafers once in contact with metallics must not be loaded[4] |
| Example process: CMI.BARC | — | Chemistry CF4; gap 47mm / SH temp 40°C; etch rate DUV42P 110 nm/min, M108Y/M35G 110 nm/min; selectivity SiO2: 170, Si: 85[4] |
| Example process: CMI.OX.PR | — | Chemistry C4F8 O2 Ar; gap 47mm / SH temp 40°C; SiO2 etch rates 440 nm/min @1100W, 230 nm/min @500W, 200 nm/min @400W, 160 nm/min @300W, 125 nm/min @200W, 85 nm/min; selectivity PR >3:1[4] |
| Example process: CMI.OX.ASI | — | Chemistry CH2F2 C4F8 O2 Ar; gap 47mm / SH temp 40°C; etch rates SiO2 450 nm/min, aSi 35 nm/min, JSR M108Y 130 nm/min; selectivity 12:1[4] |
| Example process: CMI.SIN.OX | — | Chemistry CH2F2 O2 Ar; gap 37mm / SH temp 40°C; etch rates Si3N4 130 nm/min, Si 25 nm/min, HSQ 80 nm/min, PR 125 nm/min; selectivity >1:1[4] |
| Process gases (DRM chamber) | — | C₄F₈ [30 sccm], CF₄ [100 sccm], CHF₃ [100 sccm], CH₂F₂ [100 sccm], O₂ [30 sccm & 1000 sccm], N₂ [100 sccm], Ar [1000 sccm][4] |
| Etch process - BARC open (CMI.BARC) | — | Chemistry: CF₄; Gap 47 mm, SH temp 40°C; Etch rate DUV42P: 110 nm/min, JSR M108Y, M35G: 110 nm/min; Selectivity: 1:1[4] |
| Etch process - SiO₂ with PR mask (CMI.OX.PR @1100W) | — | Chemistry: C₄F₈ O₂ Ar; Etch rate SiO₂: 440 nm/min @600W, 230 nm/min @500W, 200 nm/min @400W, 160 nm/min @300W, 125 nm/min @200W, 85 nm/min @?; Selectivity >3:1[4] |
| Etch process - SiO₂ with aSi mask (CMI.OX.ASI) | — | Chemistry: CH₂F₂ C₄F₈ O₂ Ar; Etch rate SiO₂: 450 nm/min, aSi: 35 nm/min, JSR M108Y: 130 nm/min; Selectivity 12:1[4] |
| Etch process - Si₃N₄ with HSQ mask (CMI.SIN.OX) | — | Chemistry: CH₂F₂ O₂ Ar; Etch rate Si₃N₄: 130 nm/min, Si: 25 nm/min, HSQ: 80 nm/min, PR: 125 nm/min; Selectivity >1:1[4] |
| Chamber clean process | — | Chemistry: O₂; Gap 27 mm, SH temp varies; Process name O2/CLN/XXC[4] |
| DRM chamber optimization | — | optimized for etching dielectrics such as SiO2 and SixNy[4] |
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