Comparison ledger
Oxford Instruments PlasmaPro100, Plasma-Therm 770, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PlasmaPro100Oxford Instruments | 770Plasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments PlasmaPro100 | Plasma-Therm 770 |
| Specifications | ||
| OEM | Oxford[1] | — |
| Model | PlasmaPro100[1] | Plasma-Therm 770 SLR series[2] |
| Equipment type | dry etcher[1] | — |
| Plasma source | ICP plasma etcher[1] | Inductively Coupled Plasma (ICP) coil[2] |
| Wafer size | 100mm wafers[1] | — |
| Chemistry | chlorine and bromine chemistry[1] | — |
| Clamping | electrostatic clamping[1] | — |
| Compatibility | microelectronic compatible equipment[1] | — |
| Applications | metals etching; deep polymer etching; Si, SiO2 and Si3N4 thin films etching[1] | — |
| Endpoint detection | laser reflectometry/interferometry and optical emission spectroscopy (EOS) endpoint detection[1] | — |
| Tool type | ICP plasma etcher[1] | Dry Etch[2] |
| End-point detection | laser reflectometry/interferometry end-point-detection[1] | — |
| Manufacturer | — | Plasmatherm (Unaxis)[2] |
| System type | — | Fluorine-based ICP etcher with loadlock[2] |
| Substrate bias | — | Capacitively coupled substrate RF supply[2] |
| ICP coil power | — | 1000 W at 2 MHz[2] |
| Substrate bias power | — | 500 W at 13.56 MHz[2] |
| Available gases | — | C4F8, SF6, O2, Ar, N2, CHF3, CF4[2] |
| Backside cooling | — | Helium backside cooling[2] |
| Chuck temperature | — | 10°C standard[2] |
| Wafer handling | — | Single 100 mm / 4-inch wafer handling with physical topside clamp contacting the outer 5 mm of the wafer[2] |
| Control system | — | Windows-based computer control of process and wafer handling[2] |
| Endpoint monitoring | — | In-situ laser monitor with camera and simulation software[2] |
| Number of MFC gas controllers | — | 8[3] |
| Gases (chlorine configuration) | — | N₂, O₂, CHF₃, AR, CH₄, CL₂, BCL₃, CF₄[3] |
| Wafer size range (with appropriate kit) | — | 2" to 8"[3] |
| Gases (previous usage, chlorine configuration) | — | N₂, O₂, He, CHF₃, Cl₂, BCl₃[4] |
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