Comparison ledger
Oxford Instruments PlasmaPro 100 Cobra, Plasma-Therm 770, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PlasmaPro 100 CobraOxford Instruments | 770Plasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments PlasmaPro 100 | Plasma-Therm 770 |
| Specifications | ||
| Configuration | With HDD and Software[1] | — |
| Etch plasma type | Inductively Coupled Plasma (ICP)[2] | — |
| Process gases | O2 (100sccm), O2 (10sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[2] | — |
| Mass flow controllers | 8 digital MFCs[2] | — |
| Chuck type | Electrostatic clamping and biasing chuck[2] | — |
| Chuck temperature range | 20°C to 60°C[2] | — |
| End-point detection | Laser reflectometry/interferometry and Optical Emission Spectroscopy (OES)[2] | — |
| Type | Plasma etching tool[2] | — |
| Processing diameter | Full wafer 100 mm[2] | — |
| Plasma type | High density plasma of ICP (Inductively Coupled Plasma) type[2] | — |
| Chuck | Electrostatic clamping and biasing chuck controlled in temperature[2] | — |
| Supported gases | O2 (100 sccm), O2 (10 sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[2] | — |
| Endpoint detection | Laser reflectometry/interferometry and optical emission spectroscopy[2] | — |
| Wafer size | 100 mm (full wafer)[2] | — |
| Number of MFCs | 8 digital Mass Flow Controllers[2] | — |
| Gases available | O2 (100sccm), O2 (10sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[2] | — |
| Etch materials | Al, Ti, TiN, Si, SiO2, Si3N4, polyimide, Al2O3[2] | — |
| Gases | O2 (100 sccm), O2 (10 sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[2] | — |
| Compatibility | Microelectronic compatible[2] | — |
| Manufacturer | — | Plasmatherm (Unaxis)[3] |
| Model | — | Plasma-Therm 770 SLR series[3] |
| Tool type | — | Dry Etch[3] |
| System type | — | Fluorine-based ICP etcher with loadlock[3] |
| Plasma source | — | Inductively Coupled Plasma (ICP) coil[3] |
| Substrate bias | — | Capacitively coupled substrate RF supply[3] |
| ICP coil power | — | 1000 W at 2 MHz[3] |
| Substrate bias power | — | 500 W at 13.56 MHz[3] |
| Available gases | — | C4F8, SF6, O2, Ar, N2, CHF3, CF4[3] |
| Backside cooling | — | Helium backside cooling[3] |
| Chuck temperature | — | 10°C standard[3] |
| Wafer handling | — | Single 100 mm / 4-inch wafer handling with physical topside clamp contacting the outer 5 mm of the wafer[3] |
| Control system | — | Windows-based computer control of process and wafer handling[3] |
| Endpoint monitoring | — | In-situ laser monitor with camera and simulation software[3] |
| Number of MFC gas controllers | — | 8[4] |
| Gases (chlorine configuration) | — | N₂, O₂, CHF₃, AR, CH₄, CL₂, BCL₃, CF₄[4] |
| Wafer size range (with appropriate kit) | — | 2" to 8"[4] |
| Gases (previous usage, chlorine configuration) | — | N₂, O₂, He, CHF₃, Cl₂, BCl₃[5] |
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