Waferpedia

Comparison ledger

100 ICP FluorineversusUnity II E 85 DD

Oxford Instruments 100 ICP Fluorine, Tokyo Electron Unity II E 85 DD, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
Unity II E 85 DDTokyo Electron
OEMOxford InstrumentsTokyo Electron
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorineTokyo Electron Unity II E 85
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]8 inch[2]
Configuration—Oxide[2]
OEM—Tel[2]
Model—Unity II E 85 DD[2]
Type—Etch[2]
Process—Oxide[2]
Vintage—1997[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]inventory listing