Comparison ledger
Oxford Instruments 100 ICP Fluorine, Plasma-Therm SLR-770, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | SLR-770Plasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | 2" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Plasma-Therm SLR 770 |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | — |
| System type | — | Shuttle lock ICP inductively coupled plasma etch system[2] |
| Controller | — | PC controller[2] |
| Load lock | — | Vacuum load lock with wafer transfer robot[2] |
| Wafer size capability | — | Can process wafers from 2" to 8" depending on which process kit is installed[2] |
| Current configuration | — | Currently configured with 3" kit[2] |
| Thermal transfer | — | Thermal transfer module for effective cooling of substrate utilizing helium backside thermal transfer in conjunction with computer controlled substrate clamping[2] |
| Plasma source | — | High frequency RF-based inductively coupled plasma source capable of high density plasma generation[2] |
| Pressure control | — | Closed loop pressure control[2] |
| Pumping | — | Turbo pump with roughing pump[2] |
| Gas controllers | — | Total of eight MFC gas controllers[2] |
| Previously used gases | — | N2, O2, CHF3, AR, CH4, CL2, BCL3, CF4[2] |
| Included accessory | — | Water chiller[2] |
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