Comparison ledger
Oxford Instruments 100 ICP Fluorine, Plasma-Therm 790 + RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | 790 + RIEPlasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Plasma-Therm 790 + RIE |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | — |
| Process type | — | Reactive ion etcher / reactive ion etch system[2] |
| Configured for | — | RIE (Reactive Ion Etching) processing of silicon substrates[3] |
| Maximum wafer size | — | 200 mm[4] |
| Platen size | — | 279 mm[4] |
| Platen/sample table | — | 6" water cooled sample table[5] |
| RF power supply | — | 500 W RF power supply[5] |
| RF generator | — | 500W RF generator[6] |
| RF frequency | — | 13.56 MHz[6] |
| Electrodes | — | 240 mm diameter[6] |
| Chamber | — | Non load-locked chamber[6] |
| Gas delivery | — | Shower head gas delivery system[6] |
| Gas channels | — | Six MFC gas channels[6] |
| Process gases | — | SF6, CHF3, CF4, oxygen (O2), argon (Ar); previous gases also listed as AR, N2, O2, SF6, CHF3, CF4[4] |
| Pressure range | — | < 900 mTorr[4] |
| Power range | — | < 350 W[4] |
| Vacuum system | — | Turbo pumped vacuum system with roughing pump[6] |
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